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Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…

介观与纳米尺度物理 · 物理学 2017-03-13 Vasudevan Iyer , Peide Ye , Xianfan Xu

We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a…

We present polarization-resolved transient transmission measurements on multi-layer black phosphorus. Background free two-color pump-probe spectroscopy measurements are carried out on mechanically exfoliated black phosphorus flakes that…

材料科学 · 物理学 2015-08-25 Ryan J. Suess , Mohammad M. Jadidi , Thomas E. Murphy , Martin Mittendorff

Revived attention in black phosphorus (bP) has been tremendous in the past decade. While many photoinitiated experiments have been conducted, a cross-examination of bP's photocarrier and structural dynamics is still lacking. In this report,…

材料科学 · 物理学 2023-05-24 Mazhar Chebl , Xing He , Ding-Shyue Yang

Black phosphorus has attracted interest as a material for use in optoelectronic devices due to many favorable properties such as a high carrier mobility, field-effect, and a direct bandgap that can range from 0.3 eV in its bulk crystalline…

Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is…

介观与纳米尺度物理 · 物理学 2022-09-07 H. Hedayat , A. Ceraso , G. Soavi , S. Akhavan , A. Cadore , C. Dallera , G. Cerullo , A. C. Ferrari , E. Carpene

Black phosphorus (BP) offers considerable promise for infrared and visible photonics. Efficient tuning of the bandgap and higher subbands in BP by modulation of the Fermi level or application of vertical electric fields has been previously…

Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier…

介观与纳米尺度物理 · 物理学 2017-11-22 Gen Long , Shuigang Xu , Xiangbin Cai , Zefei Wu , Tianyi Han , Jiangxiazi Lin , Yuanwei Wang , Liheng An , Yuan Cai , Xinran Wang , Ning Wang

Carrier recombination dynamics in strip silicon nano-waveguides is analyzed through time-resolved pump-and-probe experiments, revealing a complex recombination dynamics at densities ranging from ${10^{14}}$ to ${10^{17}}\,$cm$^{{-3}}$. Our…

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly…

材料科学 · 物理学 2017-04-05 F. Cadiz , D. Lagarde , P. Renucci , D. Paget , T. Amand , H. Carrère , A. C. H. Rowe , S. Arscott

Recently, black phosphorus (BP) has joined the two dimensional material family as a promising candidate for photonic applications, due to its moderate bandgap, high carrier mobility, and compatibility with a diverse range of substrates.…

Molecular hydrogen ions in weakly bound states close to the first dissociation threshold are attractive quantum sensors for measuring the proton-to-electron mass ratio and hyperfine-induced ortho-para mixing. The experimental accuracy of…

原子物理 · 物理学 2022-09-23 A. D. Ochoa Franco , M. Beyer

Black phosphorus (BP) exhibits highly anisotropic properties and dynamical behavior that are unique even among two-dimensional and van der Waals (vdW) layered materials. Here, we show that an interlayer lattice contraction and concerted,…

介观与纳米尺度物理 · 物理学 2022-07-27 Mazhar Chebl , Xing He , Ding-Shyue Yang

Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to…

介观与纳米尺度物理 · 物理学 2016-12-08 Benoit Gaury , Paul M. Haney

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not…

介观与纳米尺度物理 · 物理学 2017-04-26 Shi-Li Yan , Zhi-Jian Xie , Jian-Hao Chen , Takashi Taniguchi , Kenji Watanabe

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap…

介观与纳米尺度物理 · 物理学 2014-11-17 Han Wang , Xiaomu Wang , Fengnian Xia , Luhao Wang , Hao Jiang , Qiangfei Xia , Matthew L. Chin , Madan Dubey , Shu-jen Han

Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical…

介观与纳米尺度物理 · 物理学 2017-04-21 Bingchen Deng , Vy Tran , Hao Jiang , Cheng Li , Yujun Xie , Qiushi Guo , Xiaomu Wang , He Tian , Han Wang , Judy J. Cha , Qiangfei Xia , Li Yang , Fengnian Xia

We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($\tau$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $\tau$…

Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical…

In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene electronic structure, and resulting electron and hole…

材料科学 · 物理学 2016-11-09 Eric Tea , Celine Hin
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