相关论文: Robust midgap states in band-inverted junctions un…

In IV-VI semiconductor heterojunctions with band-inversion, such as those made of Pb$_{1-x}$Sn$_{x}$Te or Pb$_{1-x}$Sn$_{x}$Se, interface states are properly described by a two-band model, predicting the appearance of a Dirac cone in single…

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface…

Topological phases of matter are often characterized by interface states, which were already known to occur at the boundary of a band-inverted junction in semiconductor heterostructures. In IV-VI compounds such interface states are properly…

In many of three-dimensional metals with the inversion symmetry and a weak spin-orbit interaction, Dirac points of the electron energy spectrum form band-contact lines in the Brillouin zones of these crystals, and electron topological…

Electrons in a Dirac semimetals possess linear dispersion in all three spatial dimensions, and form part of a developing platform of novel quantum materials. Bi$_{1-x}$Sb$_x$ supports a three-dimensional Dirac cone at the Sb-induced band…

We theoretically study electronic states in graded-gap junctions of IV-VI compounds with band inversion. Using a two-band model within the ${\bf k}\cdot{\bf p}$ approximation and assuming that the gap and the gap centre present linear…

We re-examine the band structure of the stripe charge ordered state of $\alpha$-(BEDT-TTF)$_2$I$_3$ under pressure by using an extended Hubbard model within the Hartree mean-field theory. By increasing pressure, we find a topological…

In iron-based superconductors, band inversion of $d$- and $p$-orbitals yields Dirac semimetallic states. We theoretically investigate their topological properties in normal and superconducting phases, based on the tight-binding model…

We study band modulations and topological transitions in a one-dimensional periodic bead-on-string chain. Using an exact transfer-matrix formulation of the wave equation with periodically modulated mass density, combined with numerical…

We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we…

Antimonene is a novel two-dimensional (2D) semiconducting material of group V elements proposed in a recent literature [Zhang et al., Angew. Chem. Int. Ed. 54, 1-5 (2015)]. Using first-principles calculations, we demonstrated that the…

Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer.…

Here we study the systematic evolution of the topological properties of a Chern insulator in presence of an electronic dispersion that can be tuned smoothly from being Dirac-like till a semi-Dirac one and beyond. The band structure under…

Topological crystalline insulators in IV-VI compounds host novel topological surface states consisting of multi-valley massless Dirac fermions at low energy. Here we show that strain generically acts as an effective gauge field on these…

Bound states in the continuum (BICs) in photonic slabs and metasurfaces appear as polarization singularities in momentum space, characterized by an integer winding number. This winding is widely treated as a robust topological label,…

Topological superconductors should be able to provide essential ingredients for quantum computing, but are very challenging to realize. Spin-orbit interaction in iron-based superconductors opens the energy gap between the $p$-states of…

Electronic structures of Ge$_{1-x}$Sn$_{x}$ alloys (0 $\leq$ $x$ $\leq$ 1) are theoretically studied by nonlocal empirical pseudopotential method. For relaxed Ge$_{1-x}$Sn$_{x}$, a topological semimetal is found for $\textit x$ $>$ 41$\%$…

Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically…

The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $\Delta$. Dielectric breakdown limits the…

We have found out that the band inversion in a silicene quantum dot (QD), in perpendicular magnetic $B$ and electric $\Delta_z$ fields, drastically depends on the strength of the magnetic field. We study the energy spectrum of the silicene…