中文
相关论文

相关论文: Frustrated Magnetism in Mott Insulating (V$_{1-x}$…

200 篇论文

We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

The coupling between structural, electronic and magnetic degrees of freedom across the metal-insulator transition in V2O3 makes it hard to determine the main driving mechanism behind the transition. Specifically, the role of magnetism has…

Frustrated magnets provide a platform for exploring exotic phases beyond conventional ordering, with potential relevance to functional materials and information technologies. In this work, we use Monte Carlo simulations to map the…

强关联电子 · 物理学 2025-12-16 Prakash Timsina , Andres Chappa , Deema Alyones , Igor Vasiliev , Ludi Miao

Despite decades of experimental and theoretical efforts, the origin of metal-insulator transitions (MIT) in strongly-correlated materials is one of the main longstanding problems in condensed matter physics. An archetypal example is V2O3,…

LDA+DMFT, the computation scheme merging the local density approximation and the dynamical mean-field theory, is employed to calculate spectra both below and above the Fermi energy and spin and orbital occupations in the correlated…

强关联电子 · 物理学 2009-11-10 G. Keller , K. Held , V. Eyert , D. Vollhardt , V. I. Anisimov

We show that the pressure-temperature phase diagram of the Mott insulator Ca$_{2}$RuO$_{4}$ features a metal-insulator transition at 0.5GPa: at 300K from paramagnetic insulator to paramagnetic quasi-two-dimensional metal; at $T \leq$ 12K…

The Mott-Hubbard metal-insulator transition in the paramagnetic phase of the one-band Hubbard model has long been used to describe similar features in real materials like V$_2$O$_3$. Here we show that this transition is hidden inside a…

强关联电子 · 物理学 2009-11-10 R. Zitzler , N. Tong , Th. Pruschke , R. Bulla

Magnetic correlations in all four phases of pure and doped vanadium sesquioxide V_2O_3 have been examined by magnetic thermal neutron scattering. While the antiferromagnetic insulator can be accounted for by a Heisenberg localized spin…

强关联电子 · 物理学 2009-10-31 Wei Bao , C. Broholm , G. Aeppli , S. A. Carter , P. Dai , T. F. Rosenbaum , J. M. Honig , P. Metcalf , S. F. Trevino

We develop a general framework, which combines exact diagonalization in small clusters with a density matrix variational principle, to study frustrated magnets at finite temperature. This thermodynamic hierarchical mean-field technique is…

强关联电子 · 物理学 2012-10-05 L. Isaev , G. Ortiz

We report the synthesis and properties of two new insulating phases of SrFeO3-d with introduction of oxygen deficiencies in metallic SrFeO3 ; one with 0.15 < d < 0.19 (sample A)and the other above d = 0.19 (sample B). Sample A shows large…

材料科学 · 物理学 2009-11-11 S. Srinath , M. Mahesh Kumar , M. L. Post , H. Srikanth

The isostructural metal-insulator transition in Cr-doped V2O3 is the textbook example of a Mott-Hubbard transition between a paramagnetic metal and a paramagnetic insulator. We review recent theoretical calculations as well as experimental…

强关联电子 · 物理学 2013-03-11 P. Hansmann , A. Toschi , G. Sangiovanni , T. Saha-Dasgupta , S. Lupi , M. Marsi , K. Held

Motivated by recent experiments on BaCuSi2O6, we investigate magnetic excitations and quantum phase transitions of layered dimer magnets with inter-layer frustration. We consider two scenarios, (A) a lattice with one dimer per unit cell and…

强关联电子 · 物理学 2007-12-13 Oliver Rösch , Matthias Vojta

We determine the electronic structure and phase stability of paramagnetic V$_2$O$_3$ at the Mott-Hubbard metal-insulator phase transition, by employing a combination of an ab initio method for calculating band structures with dynamical…

强关联电子 · 物理学 2015-06-11 I. Leonov , V. I. Anisimov , D. Vollhardt

The magnetic properties and Mott transition of the half-filled Hubbard model on the 1/5 depleted square lattice with frustration is studied at zero temperature by the variational cluster approximation. The $(\pi,\pi)$ N\'eel ordering (AF)…

强关联电子 · 物理学 2015-06-22 Atsushi Yamada

The 3d electronic structure and phase transition in pure and Cr doped V2O3 are theoretically investigated in relation to the 3d spin-orbit interaction and lattice distortion. A model consisting of the nearest-neighbor V ion pair with full…

强关联电子 · 物理学 2016-08-31 Arata Tanaka

We investigate the paramagnetic-metal-to-antiferromagnetic-metal and antiferromagnetic-metal-to- antiferromagnetic-insulator transitions using a slave-boson mean-field theory. To this effect, we discuss the ground state of the half-filled…

强关联电子 · 物理学 2009-10-31 Imseok Yang , Ekkehard Lange , Gabriel Kotliar

Recent neutron scattering experiments on V2O3 show that the magnetic fluctuations on the metallic side of the antiferromagnetic metal-insulator transition are not related to the spin structure of the insulator, but rather to the…

强关联电子 · 物理学 2016-08-31 T. Wolenski , M. Grodzicki , J. Appel

The results of ac and dc magnetic susceptibility isothermal magnetization and heat-capacity measurements as a function of temperature (T) are reported for Sr3NiRhO6 and Sr3NiPtO6 containing magnetic chains arranged in a triangular fashion…

强关联电子 · 物理学 2009-11-13 Niharika Mohapatra , Kartik K Iyer , Sudhindra Rayaprol , E. V. Sampathkumaran
‹ 上一页 1 2 3 10 下一页 ›