相关论文: High-Performance Flexible Magnetic Tunnel Junction…

Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice…

The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor/ferromagnet/superconductor (SFS) heterostructures, as either spintronic devices or…

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…

Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at…

Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static…

Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…

Soft modular robots enable more flexibility and safer interaction with the changing environment than traditional robots. However, it has remained challenging to create deformable connectors that can be integrated into soft machines. In this…

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…

We develop a fast Magnetic Josephson Junction (MJJ) - a superconducting ferromagnetic device for a scalable high-density cryogenic memory compatible in speed and fabrication with energy-efficient Single Flux Quantum (SFQ) circuits. We…

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…

Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…

Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi…

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated.…

Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…

We report on the noise performance characteristics of magnetic sensors using both magnetic tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different noise and detectivity. Of the sensors…

CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…

We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\Omega$ $\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a…