相关论文: Stress modulated optical spin-injection in bulk se…

A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in…

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…

The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…

Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent…

By direct measurements of the complex optical conductivity $\sigma(\nu)$ of FeSi we have discovered a broad absorption peak centered at frequency $\nu_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is…

We present a comprehensive theory of the circularly polarized luminescence and its dependence on strain in spin-polarized Si and Ge. Symmetries of wavefunctions and interactions are used to derive concise ratios between intensities of the…

We show that the efficiency of manipulating electron spin in semiconductor quantum wells can be enhanced by tuning the strain strength. The effect combining intrinsic and strain-induced spin splitting varies for different systems, which…

The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…

The effect of a uniaxial strain on the optical spin orientation of a cubic semiconductor is investigated by calculating the valence wavefunctions, the optical oscillator strengths and the initial electron spin polarization for near resonant…

We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena,…

We advance spin noise spectroscopy to an ultrafast tool to resolve high frequency spin dynamics in semiconductors. The optical non-demolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers…

The generation of an out-of-equilibrium population of spin-polarized carriers is a keystone process for quantum technologies and spintronics alike. It can be achieved through the so-called optical spin orientation by exciting the material…

We calculate the dynamical fluctuation spectrum of electronic spins in a semiconductor under a steady-state illumination by light containing polarization squeezing correlations. Taking into account quasi-particle lifetime and spin…

The narrow gap semiconductor FeSi owes its strong paramagnetism to electron-correlation effects. Partial Co substitution for Fe produces a spin-polarized doped semiconductor. The spin-polarization causes suppression of the metallic…

We report spin amplification using a capacitive beam splitter in n-type GaAs where the spin polarization is monitored via transverse electron focusing measurement. It is shown that partially spin-polarized current injected by the emitter…

Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70…

We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the…

The macroscopic dielectric function in the random-phase-approximation without local field effect has been implemented using the local density approximation with an all electron, full-potential linear muffin-tin orbital basis-set. This…

We study the relationship between the circular polarization of photoluminescence and the magnetic field-induced spin-polarization of the recombining charge carriers in bulk Si and Ge/Si quantum dots. First, we quantitatively compare…

We report quantum enhancement of Faraday rotation spin noise spectroscopy by polarization squeezing of the probe beam. Using natural abundance Rb in 100 Torr of N_2 buffer gas, and squeezed light from a sub-threshold optical parametric…