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相关论文: Strain Mapping In Single-Layer 2D Crystals Via Ram…

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The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on e.g. the direction and magnitude of mechanical strain and doping. Here we present systematic…

An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…

介观与纳米尺度物理 · 物理学 2024-09-17 Priyesh Kumar , Sudip Kumar Deb , Subhananda Chakrabarti , Jhuma Saha

Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven…

Raman spectra of few-layer WS2 have been measured with up to seven excitation energies, and peculiar resonance effects are observed. The two-phonon acoustic phonon scattering signal close to the main E2g1 peak is stronger than the main…

介观与纳米尺度物理 · 物理学 2017-06-07 Jinho Yang , Jae-Ung Lee , Hyeonsik Cheong

By means of the plane wave method we study spin wave dynamics in two-dimensional bi-component magnonic crystals based on a squeezed hexagonal lattice and consist of a permalloy thin film with cobalt inclusions. We explore the dependence of…

介观与纳米尺度物理 · 物理学 2019-05-07 S. Mamica , M. Krawczyk , D. Grundler

The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the…

We report results of micro-Raman spectroscopy investigation of the "graphene-like" mechanically exfoliated single-crystal bismuth telluride films with the thickness ranging from a few-nm-range to bulk limit. It is found that the optical…

材料科学 · 物理学 2015-05-18 K. M. F. Shahil , M. Z. Hossain , D. Teweldebrhan , A. A. Balandin

Strain presents a straightforward tool to tune electronic properties of atomically thin nanomaterials that are highly sensitive to lattice deformations. While the influence of strain on the electronic band structure has been intensively…

介观与纳米尺度物理 · 物理学 2017-07-26 Maja Feierabend , Alexandre Morlet , Gunnar Berghäuser , Ermin Malic

The effect of strain on the magnetic order and band structure of single-layer CrAsS$_4$ has been investigated by first-principles calculations based on density functional theory. We found that single-layer CrAsS$_4$ was an antiferromagnetic…

材料科学 · 物理学 2021-10-01 Tengfei Hu , Wenhui Wan , Yanfeng Ge , Yong Liu

We report a theoretical investigation of the ultrafast dynamics of electrons and phonons in strained monolayer WS$_2$ following photoexcitation. We show that strain substantially modifies the phase space for electron-phonon scattering,…

介观与纳米尺度物理 · 物理学 2025-03-06 Yiming Pan , Fabio Caruso

The lattice dynamics of low-frequency rigid-plane modes in metallic (graphene multilayers, GML) and in insulating (hexagonal boron-nitride multilayers, BNML) layered crystals is investigated. The frequencies of shearing and compression…

材料科学 · 物理学 2012-08-17 K. H. Michel , B. Verberck

The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman…

材料科学 · 物理学 2009-01-08 Stephane Berciaud , Sunmin Ryu , Louis E. Brus , Tony F. Heinz

The inherent flexibility of two dimensional materials allows for efficient manipulation of their physical properties through strain application, which is essential for the development of advanced nanoscale devices. This study aimed to…

材料科学 · 物理学 2025-01-28 Aytac Celik

Strain is an effective method to tune the electronic properties of two-dimension (2D) materials, and can induce novel phase transition. Recently, 2D $\mathrm{MA_2Z_4}$ family materials are of interest because of their emerging topological,…

材料科学 · 物理学 2022-08-31 San-Dong Guo , Wen-Qi Mu , Jia-Hao Wang , Yu-Xuan Yang , Bing Wang , Yee-Sin Ang

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We…

Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and…

Contrary to a broadly accepted assumption we show that random (Ga,In)P is not an exception with respect to the crude classification of the phonon mode behavior of random mixed crystals in terms of 1-bond->1-mode systems or 2-bond->1-mode…

材料科学 · 物理学 2008-01-08 O. Pages , A. Chafi , D. Fristot , A. V. Postnikov

Deformation band patterning in single crystals is investigated using a finite strain crystal viscoplasticity model based on the evolution of dislocation densities. In the presence of strong latent hardening and weak rate dependence, the…

材料科学 · 物理学 2025-07-02 Jean-Michel Scherer

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain…

材料科学 · 物理学 2021-05-11 Felix Carrascoso , Hao Li , Riccardo Frisenda , Andres Castellanos-Gomez

We calculate the double resonant (DR) Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes, and two-phonons ones. Phonon and electronic dispersions reproduce calculations based on density functional…

介观与纳米尺度物理 · 物理学 2011-07-26 Pedro Venezuela , Michele Lazzeri , Francesco Mauri