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相关论文: Strain Mapping In Single-Layer 2D Crystals Via Ram…

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Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…

介观与纳米尺度物理 · 物理学 2020-04-14 Ashby Phillip John , Arya Thenapparambil , Madhu Thalakulam

In contrary to the widely reported single and symmetric peak feature of G' (or 2D) band in Raman spectrum of graphene, we herein report the observation of splitting in G' band in free standing graphene. Our experimental findings provide a…

材料科学 · 物理学 2015-06-04 Zhiqiang Luo , Chunxiao Cong , Jun Zhang , Qihua Xiong , Ting Yu

Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for…

Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…

介观与纳米尺度物理 · 物理学 2019-03-07 David Maeso , Sahar Pakdel , Hernan Santos , Nicolas Agrait , Juan Jose Palacios , Elsa Prada , Gabino Rubio-Bollinger

Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain,…

介观与纳米尺度物理 · 物理学 2019-03-08 Lukas Mennel , Marco M. Furchi , Stefan Wachter , Matthias Paur , Dmitry K. Polyushkin , Thomas Mueller

Micro-Raman spectroscopy has been used to study lattice dynamics associated with the ferroelectric domains of a BiFeO$_3$ single crystal at low temperature. The phonon assignment shows a large frequency splitting between the transverse and…

强关联电子 · 物理学 2009-11-13 M. Cazayous , D. Malka , D. Lebeugle , D. Colson

We report ab-initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman active modes, A1g and E2g as a function of the number of layers.…

材料科学 · 物理学 2015-05-30 A. Molina-Sánchez , L. Wirtz

Manipulating the optical and quantum properties of two-dimensional (2D) materials through strain engineering is not only fundamentally interesting but also provides significant benefits across various applications. In this work, we employ…

材料科学 · 物理学 2025-09-23 Nguyen Tuan Hung , Vuong Van Thanh , Mingda Li , Takahiro Shimada

Raman spectroscopy is a powerful tool for characterizing the local properties of graphene. Here, we introduce a method for evaluating unknown strain configurations and simultaneous doping. It relies on separating the effects of hydrostatic…

Structural anisotropy in layered two-dimensional materials can lead to highly anisotropic optical absorption which, in turn, can profoundly a^ect their phonon modes. These e^ects include lattice orientation-dependent and excitation…

The layered dichalcogenide MoS2 has many unique physical properties in low dimensions. Recent experimental Raman spectroscopies report an anomalous blue shift of the in-plane E2g1 mode with decreasing thickness, a trend that is not…

材料科学 · 物理学 2013-08-30 Xin Luo , Yanyuan Zhao , Jun Zhang , Qihua Xiong , Su Ying Quek

We derive the frequency shifts and the broadening of $\Gamma$ point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron…

介观与纳米尺度物理 · 物理学 2015-06-19 Mohamed Assili , Sonia Haddad

The use of simple, fast and economic experimental tools to characterize low-dimensional materials is an important step in the process of democratizing the use of such materials in laboratories around the world. Raman spectroscopy has arisen…

Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and…

介观与纳米尺度物理 · 物理学 2014-06-30 A. A. Mitioglu , P. Plochocka , G. Deligeorgis , S. Anghel , L. Kulyuk , D. K. Maude

Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain,…

We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that…

Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge…

Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a…

We present polarization resolved Raman scattering study of surface vibration modes in the topological insulator Bi$_2$Se$_3$ single crystal and thick films. Besides the four Raman active bulk phonons, we observed four additional modes with…

Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how capping layers impart strain to monolayer MoS$_{2}$ using…