相关论文: Static strain tuning of quantum dots embedded in a…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The…
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…
The superconducting proximity effect has been the focus of significant research efforts over many years and has recently attracted renewed interest as the basis of topologically non-trivial states in materials with a large spin orbit…
We report raster scan multiplexed charge-stability diagram measurements for tuning multiple gate-defined quantum dots in GaAs/AlGaAs heterostructures. We evaluate the charge sensitivity of the quantum point contact (QPC) in both radio…
Mechanical strain is a powerful tool to tune the optical and optoelectronic properties of atomically thin semiconductors. Inhomogeneous strain plays an important role in exciton funneling and the activation of single-photon emitters in 2D…
We propose a straightforward and effective approach to design, by strain-engineering, photonic topological insulators supporting high quality factors edge states. Chiral strain-engineering creates opposite synthetic gauge fields in two…
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding…
Semiconductor quantum dots are a promising platform for generating single and entangled photons.Still, their use is limited even in the most advanced structures by changes in the charge state of the quantum dot and its environment. Here, we…
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and…
Excitons in 2D material bubbles-nanoscale deformations in atomically thin materials, typically exhibiting a dome-like shape-are confined by the strain effect, exhibiting extraordinary emission properties, such as single photon generation,…
We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over…
Elastic strain engineering utilizes stress to realize unusual material properties. For instance, strain can be used to enhance the electron mobility of a semiconductor, enabling more efficient solar cells and smaller, faster transistors. In…
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined.…
We present a practical method for active phase control on a photonic chip that has immediate applications in quantum photonics. Our approach uses strain-optic modification of the refractive index of individual waveguides, effected by a…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
Lattice matched GaAs/AlGaAs epitaxial structures with quantum dots are studied under static uniaxial stress applied either along the $[001]$ or $[110]$ crystal directions. We conduct simultaneous measurements of the spectral shifts in the…
The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si…
Semiconductor quantum dots (QDs) offer outstanding quantum-optical properties, making them highly attractive for quantum information technologies. However, combining wide-range electrical tunability, efficient photon extraction,…