相关论文: A performance comparison between \b{eta}-Ga2O3 and…
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…
In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by…
We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the…
This paper presents a design and implementation of a high-power Gallium Nitride (GaN)-based multilevel Hbridge inverter to excite wireless charging coils for the wireless power transfer of electric vehicles (EVs). Compared to the…
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions…
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd-vacancies…
Radio frequency (RF) wireless power transfer (WPT) is a promising technology for charging the Internet of Things. Practical RF-WPT systems usually require energy beamforming (EB), which can compensate for the severe propagation loss by…
Superconductivity has been observed for the 2D electron gas (2DEG) at the interface of KTaO3 with other oxides, with a transition temperature about an order of magnitude higher than its 3d cousin SrTiO3. The superconducting transition…
Magnetic and transport properties of (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds, prepared by the citrate gel route, have been investigated. These compounds are found to crystallize in the orthorhombic structure. Charge ordering…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
I use first principles calculations to investigate the thermal conductivity of $\beta$-In$_2$O$_3$ and compare the results with that of $\alpha$-Al$_2$O$_3$, $\beta$-Ga$_2$O$_3$, and KTaO$_3$. The calculated thermal conductivity of…
We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently…
To develop effective thermal management strategies for GaN transistors, it is essential to accurately predict the device junction temperature. Since the width of the heat generation in the devices is comparable to phonon mean free paths of…
In recent years, three-dimensional GaN-based transistors have been intensively studied for their dramatically improved output power, better gate controllability, and shorter channels for speedup and miniaturization. However, thermal…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier…
Nanoscale hot spots forming tens of nanometers beneath the gate in advanced FinFET and HEMT devices drive heat transport into a non-Fourier regime, challenging conventional (Fourier-based) finite-element (FEM) analyses and complicating…