相关论文: Hole Mobility Model for Si Double-Gate Junctionles…

A fundamental obstacle toward the realization of GaN p-channel transistors is its low hole mobility. Here we investigate the intrinsic phonon-limited mobility of electrons and holes in wurtzite GaN using the ab initio Boltzmann transport…

We probe the accuracy limit of {\it ab initio} calculations of carrier mobilities in semiconductors, within the framework of the Boltzmann transport equation. By focusing on the paradigmatic case of silicon, we show that fully predictive…

For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…

In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to…

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate…

We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric…

The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…

Currently, the most common method to calculate transport properties for materials under extreme conditions is based on the phenomenological Kubo-Greenwood method. The results of an inquiry into the justification and context of that model…

We study the elastic response of planar black hole (BH) solutions in a simple class of holographic models with broken translational invariance. We compute the transverse quasi-normal mode spectrum and the propagation speed of the lowest…

In [arXiv:hep-th/0611083] we announced the complete integrability of geodesic motion in the general higher-dimensional rotating black-hole spacetimes. In the present paper we prove all the necessary steps leading to this conclusion. In…

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors…

Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a…

The carrier mobility of anisotropic two-dimensional (2D) semiconductors under longitudinal acoustic (LA) phonon scattering was theoretically studied with the deformation potential theory. Based on Boltzmann equation with relaxation time…

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field,…

We investigate the spin-Hall effect of both electrons and holes in semiconductors using the Kubo formula in the correct zero-frequency limit taking into account the finite momentum relaxation time of carriers in real semiconductors. This…

Motivated by recent experiments [Zhang \textit{et al.}, Phys. Rev. Lett. \textbf{95}, 216801 (2005) and Ellenberger \textit{et al.}, cond-mat/0602271] reporting novel ringlike structures in the density--magnetic-field ($n_{2D}$\emph{--B})…

We investigate spin transport in 2-dimensional insulators, with the long-term goal of establishing whether any of the transport coefficients corresponds to the Fu-Kane-Mele index which characterizes 2d time-reversal-symmetric topological…

We present the details of a model in general relativity of a small charged black hole moving in an external gravitational and electromagnetic field. The importance of our model lies in the fact that we can derive the equations of motion of…

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was…