相关论文: Split-gate device for indirect excitons
Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applications. In this work, we use a nano-patterned graphene gate to…
We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an…
Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic…
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition…
An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors.…
Excitons, quasi-particles consisting of electron-hole pairs bound by the Coulomb interaction, are a potential medium for processing of photonic information in the solid-state. Information processing via excitons requires efficient…
Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an…
An exciton beam splitter is designed and computationally implemented, offering the prospect of excitonic interferometry. Exciton interaction between propagation conduits is modeled using a coupling parameter that varies with position. In…
We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…
We present a fast phase gate scheme that is experimentally achievable and has an operation time more than two orders of magnitude faster than current experimental schemes for low numbers of pulses. The gate time improves with the number of…
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane…
We realized a potential energy gradient - a ramp - for indirect excitons using a shaped electrode at constant voltage. We studied transport of indirect excitons along the ramp and observed that the exciton transport distance increases with…
We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…
Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are…
Split-gate constrictions can be used to produce controllable scattering in a fractional quantum Hall state and constitute a very versatile model system for the investigation of non-Fermi physics in edge states. Controllable inter-edge…
The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a…
A simple method to create and control magnetic potentials onto coupled quantum wells is demonstrated for indirect-exciton magnetic confinement. Localized inhomogeneous magnetic potentials with periodically distributed local minima and…
Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX…
Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs…