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We provide a comprehensive analysis of the prominent tight-binding (TB) models for transition metal dichalcogenides (TMDs) available in the literature. We inspect the construction of these TB models, discuss their parameterization used and…

材料科学 · 物理学 2024-06-25 Bert Jorissen , Lucian Covaci , Bart Partoens

Monolayer transition metal dichalcogenides $MX_2$ ($M$ = Mo,W and $X$ = Te, Se, S) in 1T' structure were predicted to be quantum spin Hall insulators based on first-principles calculations, which were quickly confirmed by multiple…

材料科学 · 物理学 2021-08-04 Mengli Hu , Guofu Ma , Chun Yu Wan , Junwei Liu

We developed a six-band $k \cdot p$ model that describes the electronic states of monolayer transition metal dichalcogenides (TMDCs) in $K$-valleys. The set of parameters for the $k \cdot p$ model is uniquely determined by decomposing…

介观与纳米尺度物理 · 物理学 2017-04-12 D. V. Rybkovskiy , I. C. Gerber , M. V. Durnev

We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly…

材料科学 · 物理学 2014-03-07 Gui-Bin Liu , Wen-Yu Shan , Yugui Yao , Wang Yao , Di Xiao

Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. Due to the size-induced transition from a bulk to…

Moir\'e superlattices have emerged as a versatile platform for exploring a wide range of ex- otic quantum phenomena. Unlike angstrom-scale materials, the moir\'e length-scale system contains a large number of atoms, and its electronic…

材料科学 · 物理学 2025-11-10 Xueheng Kuang , Federico Escudero , Pierre A. Pantaleón , Francisco Guinea , Zhen Zhan

Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential decay of electronic density of states into the bandgap,…

介观与纳米尺度物理 · 物理学 2023-08-04 Prasad Sarangapani , James Charles , Tillmann Kubis

Hybridization effects play a crucial role in determining the electronic properties of hybrid inorganic/organic interfaces. To gain insight into these important interactions, we perform a first-principles study based on hybrid…

材料科学 · 物理学 2022-04-06 Jannis Krumland , Caterina Cocchi

We present an accurate \textit{ab-initio} tight-binding hamiltonian for the transition-metal dichalcogenides, MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$, with a minimal basis (the \textit{d} orbitals for the metal atoms and \textit{p} orbitals for…

介观与纳米尺度物理 · 物理学 2015-11-09 Shiang Fang , Rodrick Kuate Defo , Sharmila N. Shirodkar , Simon Lieu , Georgios A. Tritsaris , Efthimios Kaxiras

Tight-binding (TB) molecular dynamics (MD) has emerged as a powerful method for investigating the atomic-scale structure of materials --- in particular the interplay between structural and electronic properties --- bridging the gap between…

材料科学 · 物理学 2007-05-23 Laurent J Lewis , Normand Mousseau

As semiconductor technologies continue to scale down to the nanoscale, the efficient prediction of material properties becomes increasingly critical. The tight-binding (TB) method is a widely used semi-empirical approach that offers a…

材料科学 · 物理学 2025-11-27 In Jun Park , Kamal Choudhary

We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with…

介观与纳米尺度物理 · 物理学 2017-01-05 S. J. Magorrian , V. Zólyomi , V. I. Fal'ko

We calculate the phonon-dispersion relations of several two-dimensional materials and diamond using the density-functional based tight-binding approach (DFTB). Our goal is to verify if this numerically efficient method provides sufficiently…

Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper an…

材料科学 · 物理学 2015-06-18 Ganesh Hegde , Michael Povolotskyi , Tillmann Kubis , Timothy Boykin , Gerhard Klimeck

Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moir\'e potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we…

介观与纳米尺度物理 · 物理学 2021-09-30 S. J. Magorrian , V. V. Enaldiev , V. Zólyomi , Fábio Ferreira , Vladimir I. Fal'ko , David A. Ruiz-Tijerina

The valence flat bands in transition metal dichalcogenide (TMD) heterobilayers are shown to exhibit strong intralayer spin-orbit coupling. This is reflected in a simple tight-binding model with spin-dependent complex hoppings based on the…

介观与纳米尺度物理 · 物理学 2022-06-01 Louk Rademaker

We investigate the role of long-range Coulomb interactions in $M$-valley moir\'es using the self-consistent Hartree-Fock approximation. This platform was recently proposed [Nature 643, 376 (2025) and arXiv:2411.18828 (2024)] as a new class…

介观与纳米尺度物理 · 物理学 2025-09-24 Christophe De Beule , Liangtao Peng , E. J. Mele , Shaffique Adam

In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can…

材料科学 · 物理学 2013-09-02 E. Cappelluti , R. Roldán , J. A. Silva-Guillén , P. Ordejón , F. Guinea

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…

材料科学 · 物理学 2017-11-22 Nicolas Onofrio , David Guzman , Alejandro Strachan

There is a general perception that large piezoelectric response in ferroelectric alloys requires tuning the system towards a morphotropic phase boundary (MPB), i.e., a composition driven inter-ferroelectric instability. Here we show that…

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