相关论文: Analytical Modeling of Metal Gate Granularity base…

Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson…

Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to…

Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority…

Particle-based approximate Bayesian inference approaches such as Stein Variational Gradient Descent (SVGD) combine the flexibility and convergence guarantees of sampling methods with the computational benefits of variational inference. In…

Materials discovery, especially for applications that require extreme operating conditions, requires extensive testing that naturally limits the ability to inquire the wealth of possible compositions. Machine Learning (ML) has nowadays a…

We propose a mathematical framework for designing robust networks of coupled phase-oscillators by leveraging a vulnerability measure proposed by Tyloo et. al that quantifies how much a small perturbation to a phase-oscillator's natural…

Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting…

Inspired by experimental observations related to electrolyte-gated transistors (EGTs) where non-ideals behaviors are shown and not described by just one theoretical model, we proposed a charge carriers transport model able to describe the…

High-dimensional generative modeling is fundamentally a manifold-learning problem: real data concentrate near a low-dimensional structure embedded in the ambient space. Effective generators must therefore balance support fidelity -- placing…

The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a…

The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation…

This paper considers right-invariant and controllable driftless quantum systems with state X(t) evolving on the unitary group U(n) and m inputs. The T-sampling stabilization problem is introduced and solved: given any initial condition X(0)…

Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…

The modified Gram-Schmidt (MGS) orthogonalization is one of the most well-used algorithms for computing the thin QR factorization. MGS can be straightforwardly extended to a non-standard inner product with respect to a symmetric positive…

It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR)…

The increasing penetration of inverter-based resources introduces new dynamic challenges to modern power grids, such as sub- and super-synchronous oscillations and other faster dynamics. These dynamics are typically fast in nature and are…

Gate set tomography (GST) provides precise, self-consistent estimates of the noise channels for all of a quantum processor's logic gates. But GST experiments are large, involving many distinct quantum circuits. This has prevented their use…

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…

This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density. The analytical derivation relies on a first-order correction…

We propose a novel variational ansatz for the ground-state preparation of the $\mathbb{Z}_2$ lattice gauge theory (LGT) in quantum simulators. It combines dissipative and unitary operations in a completely deterministic scheme with a…