相关论文: Strain Tunable Phononic Topological Bandgaps in Tw…

We show that the band structure of a carbon nanotube (NT) can be dramatically altered by mechanical strain. We employ an atomic force microscope tip to simultaneously vary the NT strain and to electrostatically gate the tube. We show that…

Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to…

The interplay of twist and strain in bilayer graphene enables the formation of moir\'e patterns and narrow bands that host correlated and topological phases. While magic-angle twisted bilayer graphene has been widely studied, strain…

Low temperature photoluminescence spectra of a color center in hexagonal boron nitride are analyzed. The acoustic phonon sideband can be described by a deformation coupling proportional to strain to a phonon bath that is effectively two…

In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a…

Structural strain severely impacts material properties such as the linear and non-linear optical response. Moreover, strain plays a key role, e.g., in the physics of ferroelectrics and in particular of their domain walls. $\mu$-Raman…

This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The…

We demonstrate the existence of large phononic band gaps in designed hyperuniform (isotropic) disordered two-dimensional (2D) phononic structures of Pb cylinders in epoxy matrix. The phononic band gaps in hyperuniform disordered phononic…

Two-dimensional (2D) allotrope of tin with low buckled honeycomb structure, named as stanene, is proposed to be an ideal 2D topological insulator with a nontrivial gap larger than 0.1 eV. Theoretical works also pointed out the topological…

We investigate optical nonlinearities that are induced and enhanced due to the strong phonon resonance in hexagonal boron nitride. We predict and observe large sub-picosecond duration signals due to four-wave mixing (FWM) during resonant…

The discovery of correlated phases in twisted moir\'e superlattices accelerated the search for low-dimensional materials with exotic properties. A promising approach uses engineered substrates to strain the material. However, designing…

Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by…

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

The quest for efficient and scalable thermoelectric materials has catalyzed intense interest in quasi 1D nanoribbons, where reduced dimensionality and structural tunability can decouple key transport parameters to enhance energy conversion.…

Inspired by concepts developed for fermionic systems in the framework of condensed matter physics, topology and topological states are recently being explored also in bosonic systems. The possibility of engineering systems with…

Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we…

Strain tuning is a powerful experimental method in probing correlated electron systems. Here we study the strain response of the lattice dynamics and electronic structure in semiconductor Ta$_2$NiS$_5$ by polarization-resolved Raman…

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…

The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits for computing and communications to polariton condensates to energy transport in photovoltaics. 2D semiconductors are…

Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…