相关论文: Coherent spin-transfer precession switching in ort…
Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current…
A transfer matrix technique is used to model phase coherent spin transport in the weakly disordered quasi one-dimensional channel of a gate-controlled electron spin interferometer [Datta and Das, Appl. Phys. Lett., 56, 665 (1990)]. It…
We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…
Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…
Atomic-resolution cryogenic scanning transmission electron microscopy (cryo-STEM) has provided a path to probing the microscopic nature of select low-temperature phases in quantum materials. Expanding cryo-STEM techniques to broadly tunable…
We theoretically study the influence of a predominant field-like spin-orbit torque on the magnetization switching of small devices with a uniform magnetization. We show that for a certain range of ratios (0.23-0.55) of the Slonczewski to…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
Spin transfers in magnetic multilayers offers a promising pathway toward ultrafast, energy-efficient spintronic devices. In this study, we investigate the interfacial spin pumping and temperature-dependent spin current exchange in a…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
Most materials freeze when cooled to sufficiently low temperature. We find that magnetic dipoles randomly distributed in a solid matrix condense into a spin liquid with spectral properties on cooling that are the diametric opposite of those…
Ultrafast electric manipulation of magnetic order in solids is critical for the development of future terahertz data processing. A fascinating concept for such high-speed operation is offered in metallic antiferromagnets by N\'eel…
We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of…
We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse…
Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is…
High temperature superconductivity is a property of doped antiferromagnetic insulators. The electronic structure is inhomogeneous on short length and time scales, and, as the temperature decreases, it evolves via two crossovers, before long…
We present experimental and numerical micromagnetic data on the effect of spin momentum transfer in current perpendicular to the plane spin valves. Starting from a configuration with orthogonal free and pinned layer magnetizations, the free…
Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns…
We present measurements of magnetic field and frequency dependences of the low temperature (T = 1.8 K) AC-susceptibility, and temperature and field dependences of the longitudinal field positive muon spin relaxation ({\mu}SR) for…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
Magnetization switching due to a current-pulse in symmetric and asymmetric spin valves is studied theoretically within the macrospin model. The switching process and the corresponding switching parameters are shown to depend significantly…