相关论文: Resolving and Tuning Carrier Capture Rates at a Si…
As electronic devices approach the atomic limit, the charge dynamics of individual dopant atoms increasingly constrain performance, stability, and coherence. In scanning tunnelling microscopy (STM), donor ionization is typically interpreted…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the…
Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and…
The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…
The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current…
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…
We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…
Atomic-scale disorder shapes the potential energy landscape traversed by photoexcited charge carriers, while the carriers themselves also dynamically reshape this landscape. However, resolving ultrafast photocarrier motion at atomic length…
The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin oxide, SnO, and copper oxide, Cu$_2$O. The TFT photoconduction…
Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…
In the last decade, detecting spin dynamics at the atomic scale has been enabled by combining techniques like electron spin resonance (ESR) or pump-probe spectroscopy with scanning tunneling microscopy (STM). Here, we demonstrate an…
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current…
We study frustration-free control, a measurement-feedback protocol for quantum state preparation that extends the concept of frustration-free Hamiltonians to stochastic dynamics. The protocol drives many-body systems into highly entangled…
We have performed low-temperature STM measurements on single-wall carbon nanotubes that are freely suspended over a trench. The nanotubes were grown by CVD on a Pt substrate with predefined trenches etched into it. Atomic resolution was…
Understanding the nanoscale carrier dynamics induced by light excitation is the key to unlocking futuristic devices and innovative functionalities in advanced materials. Optical pump-probe scanning tunneling microscopy (OPP-STM) has opened…
The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show…
Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications and doping is an effective way towards this goal, yet is challenging to control. Here we report the in-situ…
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias…