相关论文: Resolving and Tuning Carrier Capture Rates at a Si…
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…
Using combined low temperature scanning tunneling microscopy (STM) and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DBs) on a hydrogen-passivated Si(100)-2$\times$1 surface…
We present a simple home made solution enabling in-situ RF reflectometry measurements with a millikelvin scanning tunneling microscope (mk-STM). The additions described below were made using RF best practices following similar detection…
In order to better build the Neutral Beam Injector with Negative Ion Source (NNBI), the pre-research on key technologies has been carried out for the Comprehensive Research Facility for Fusion Technology (CRAFT). Cesium seeding into…
Controlling electron dynamics at optical clock rates is a fundamental challenge in lightwave-driven nanoelectronics. Here, we demonstrate ultrafast charge-state manipulation of individual selenium vacancies in monolayer and bilayer tungsten…
We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…
The investigation of novel electronic phases in low-dimensional quantum materials demands for the concurrent development of new measurement techniques that combine surface sensitivity with high spatial resolution and high measurement…
We present measurements of tunneling magneto-resistance (TMR) in single-wall carbon nanotubes attached to ferromagnetic contacts in the Coulomb blockade regime. Strong variations of the TMR with gate voltage over a range of four conductance…
Configuration transitions of individual molecules and atoms on surfaces are traditionally described with energy barriers and attempt rates using an Arrhenius law. This approach yields consistent energy barrier values, but also attempt rates…
We present ab initio calculations on the band structure and density of states of single wall semiconducting carbon nanotubes with high degrees (up to 25%) of B, Si and N substitution. The doping process consists of two phases: different…
When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. Research on transition metal dichalcogenide (TMD)…
Nitrogen-vacancy (NV) centers in diamond have attracted considerable interest in sensing of weak magnetic fields, such as those created by biological systems. Detecting such feeble signals requires near-surface NV centers, to reduce the…
Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a sample, four-point resistance measurements can be performed in…
Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, synthesis-induced defects in semiconductors complicate the…
Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd nanocrystals (dia, $\sim$5 nm) electronically coupled by a conducting molecule, dimercaptodiphenylacetylene. The I-V data, obtained by…
BPM (Beam Position Measurement) system is one of the most important beam diagnostic instruments in accelerators. A fully digital BPM (DBPM) has been designed for SSRF (Shanghai Synchrotron Radiation Facility). As Analog-to-Digital Converter…
Investigation of transport properties is fundamental for characterizing electronic properties and phase transitions. However, most of the transport measurements on conductive layers have been performed at macroscopic scales, and thus the…
The nitrogen-vacancy (NV) center in diamond is the prototype quantum defect that enables a variety of diamond-based quantum technologies. However, charge-state instability and spectral diffusion, often induced by substitutional nitrogen…
We study charge transport across the metal-insulator crossover in the half-filled two-dimensional Hubbard model, with particular emphasis on precision control. The dynamic current-current correlation function is obtained directly in the…