相关论文: Equivalent Circuit for Magnetoelectric Read and Wr…

We propose a novel setup for a spin-torque oscillator reader in magnetic hard disk drive technology. Two adjacent bit tracks are to be read simultaneously, leading to high data transfer rate and increased resilience to noise as the lateral…

Optimizing sensor readout schemes and integrated circuit designs for both open-loop and closed-loop implementations requires precise modeling and simulation strategies. This study introduces a novel two-port impedance model to estimate the…

Taking advantage of the Magnetoelectric (ME) and its inverse effect, this article demonstrates strain-mediated magnetoelectric write and read operations simultaneously in Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures without using…

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching…

Memristor, one of the fundamental circuit elements, has promising applications in non-volatile memory and storage technology as it can theoretically achieve infinite states. Information can be stored independently in these states and…

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…

Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information…

First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting…

This paper explains a unified approach for teaching the electrical model of power transformers to undergraduate students using magnetic circuits. The commonly used approach for explaining the electrical model of power transformers is a…

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…

Magnetoelectronics is mainly digital, i.e. governed by up and down magnetizations. In contrast, analogue magnetoelectronics makes use of phenomena occuring for non-collinear magnetization configurations. Here we review theories which have…

The time-dependent transport through single-molecule magnets coupled to magnetic or non-magnetic electrodes is studied in the framework of the generalized master equation method. We investigate the transient regime induced by the periodic…

We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…

Optical magnetometers are currently able to achieve magnetometric sensitivities below 1 fT/Hz^1/2. Although such sensitivities are typically obtained for ultra-low-field measurements, a group of optical magnetometers allows the detection of…

We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…

A general equivalent circuit for two-port lossy non-symmetric reciprocal networks is proposed. The equivalent circuit is based on the eigenstate decomposition. It has three complex parameters that are obtained from the eigenvalues and…

We propose a concept of magnetic logic circuits engineering, which takes an advantage of magnetization as a computational state variable and exploits spin waves for information transmission. The circuits consist of magneto-electric cells…

This paper presents a novel design of an electronic circuit that is equivalent to a mechanical discontinuous impact oscillator exhibiting hard impacts. The governing equations of the electronic circuit are derived to demonstrate its…

Rotating the magnetization of a magnetostrictive nanomagnet with electrically generated mechanical strain dissipates miniscule amount of energy compared to any other rotation method and would have been the ideal method to write bits in…

Conceptual memristors have recently gathered wider interest due to their diverse application in non-von Neumann computing, machine learning, neuromorphic computing, and chaotic circuits. We introduce a compact CMOS circuit that emulates…