相关论文: Equivalent Circuit for Magnetoelectric Read and Wr…
A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and…
In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…
In this paper we propose and demonstrate the potential for unifying models and algorithms for the steady state and transient simulation of single-phase and three-phase power systems. At present, disparate algorithms and models are used for…
By operating a one-electron quantum dot (fabricated between a multielectron dot and a one-electron reference dot) as a spectroscopic probe, we study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition…
We propose a reconfigurable bit comparator implemented with a nanowire spin valve whose two contacts are magnetostrictive with bistable magnetization. Reference and input bits are "written" into the magnetization states of the two contacts…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
We predict a spin echo in electron transport through layered ferromagnetic-normal-ferromagnetic metal structures: whereas a spin current polarized perpendicular to the magnetization direction decays when traversing a single homogeneous…
The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in…
Emulating various facets of computing principles of the brain can potentially lead to the development of neuro-computers that are able to exhibit brain-like cognitive capabilities. In this letter, we propose a magnetoelectronic neuron that…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
Recent experiments for linear magnetoelectric (ME) response in honeycomb antiferromagnet Co$_4$Nb$_2$O$_9$ revealed that the electric polarization can be manipulated by the in-plane rotating magnetic field in a systematic way. We propose…
The equivalent circuit model for artificial magnetic materials based on various arrangements of split rings is generalized by taking into account losses in the substrate or matrix material. It is shown that a modification is needed to the…
Single-molecule magnets (SMMs) with chemically tailorable properties are potential building blocks for quantum computing, high-density magnetic memory, and spintronics.1 2 3,4 These applications require isolated or few molecules on…
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…
Temporal modulation unlocks possibilities to dynamically control and modify the response of electromagnetic systems. Employing explicit dependencies of circuit or surface parameters on time enables the engineering of systems with…
We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…
Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…
The magnetization reversal in a single molecular magnet (SMM) weakly coupled to an electrode with spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated by means of the rate equation. A microscopic…
In the context of asynchronous concurrent shared-memory systems, a snapshot algorithm allows failure-prone processes to concurrently and atomically write on the entries of a shared array MEM , and also atomically read the whole array.…