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We study a thermal and a transverse magnetic field response of a vortex line array confined to a plane with a single columnar pinning defect. By integrating out ``bulk'' degrees of freedom away from the columnar defect we reduce this…

统计力学 · 物理学 2009-11-11 Leo Radzihovsky

We show that the Mott metal-insulator transition in the standard one-band Hubbard model can be understood as a topological phase transition. Our approach is inspired by the observation that the mid-gap pole in the self-energy of a Mott…

强关联电子 · 物理学 2020-08-26 Sudeshna Sen , Patrick J. Wong , Andrew K. Mitchell

We investigate the dynamics of the one-dimensional strongly repulsive spin-1/2 Bose-Hubbard model for filling $\nu\le1.$ While at $\nu=1$ the system is a Hubbard-Mott insulator exhibiting dynamical properties of the Heisenberg ferromagnet,…

其他凝聚态物理 · 物理学 2013-05-29 M. B. Zvonarev , V. V. Cheianov , T. Giamarchi

The static and dynamic local spin susceptibility of the organic Mott insulator $\kappa$-(ET)$_2$Cu$_2$(CN)$_3$, a model material of the spin- 1/2 triangular lattice, is studied by $^{13}$C NMR spectroscopy from room temperature down to 20…

强关联电子 · 物理学 2007-05-23 Yasuhiro Shimizu , Kazuya Miyagawa , Kazushi Kanoda , Maesato Mitsuhiko , Gunzi Saito

Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are…

A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…

强关联电子 · 物理学 2009-11-11 Hideo Yoshioka , Hitoshi Seo , Hidetoshi Fukuyama

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

强关联电子 · 物理学 2008-02-03 K. Ismail , J. O. Chu , Dragana Popovic , A. B. Fowler , S. Washburn

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We have investigated the temperature evolution of magnetism and its interrelation with structural parameters in perovskite-based layered compound Sr$_2$IrO$_4$, which is believed to be a $J_{eff}$ = 1/2 Mott insulator. The structural…

强关联电子 · 物理学 2014-12-15 Imtiaz Noor Bhatti , R. Rawat , A. Banerjee , A. K. Pramanik

We investigate the magnetic properties and Mott transition in the Hubbard model for weakly coupled chains on the anisotropic triangular lattice. Taking into account 120$^\circ$ N\'eel, and collinear orderings, the magnetic phase diagram is…

强关联电子 · 物理学 2015-06-22 Atsushi Yamada

The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high…

We report structural, magnetization, electrical resistivity and nuclear- and electron spin resonance data of the complex transition metal oxide In_2VO_5 in which structurally well-defined V-O chains are realized. An itinerant character of…

强关联电子 · 物理学 2009-11-13 A. Moller , T. Taetz , N. Hollmann , J. A. Mydosh , V. Kataev , M. Yehia , E. Vavilova , B. Buchner

Motivated by the resistive switchings in transition-metal oxides (TMOs) induced by a voltage bias, we study the far-from-equilibrium dynamics of an electric-field-driven strongly-correlated model featuring a first-order insulator-to-metal…

强关联电子 · 物理学 2023-05-26 Manuel I. Díaz , Jong E. Han , Camille Aron

I propose the emergence of the spin-orbital-coupled vector chirality in a non-frustrated Mott insulator with the strong spin-orbit coupling due to $ab$-plane's inversion-symmetry (IS) breaking. I derive the superexchange interactions for a…

强关联电子 · 物理学 2016-11-10 Naoya Arakawa

The temperature-dependent behavior of magnetic domains plays an essential role in the magnetic properties of materials, leading to widespread applications. However, experimental methods to access the three-dimensional (3D) magnetic domain…

The organic system, $\kappa$-[(BEDT-TTF)$_{1-x}$(BEDT-STF)$_x$]$_2$Cu$_2$(CN)$_3$, showing the Mott transition between a nonmagnetic Mott insulating (NMI) state and a Fermi liquid (FL), is systematically studied by calorimetric…

We investigate the spin injection and the spin transport in paramagnetic insulators described by simple Heisenberg interactions using auxiliary particle methods. Some of these methods allow access to both paramagnetic states above magnetic…

强关联电子 · 物理学 2016-02-23 Satoshi Okamoto

Vanadium dioxide (VO$_2$) exhibits hysteresis in resistance while undergoing a thermally driven insulator-metal transition (IMT). Understanding the nonequilibrium effects in resistance is of great interest, as VO$_2$ is a strong candidate…

We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…

介观与纳米尺度物理 · 物理学 2016-08-31 Y. Hanein , U. Meirav , D. Shahar , C. C. Li , D. C. Tsui , Hadas Shtrikman