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相关论文: Spatial behavior in a Mott insulator near the volt…

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We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include…

统计力学 · 物理学 2009-11-13 Huai-Bin Zhuang , Michael Ma , Xi Dai , Fu-Chun Zhang

We study the nonequilibrium switching phenomenon associated with the metal-insulator transition under electric field E in correlated insulator by a gauge-covariant Keldysh formalism. Due to the feedback effect of the resistive current I,…

其他凝聚态物理 · 物理学 2009-11-13 Naoyuki Sugimoto , Shigeki Onoda , Naoto Nagaosa

Magnetic phase diagram and Mott transition are studied in the Hubbard model on the anisotropic triangular lattice at zero temperature and half-filling by the variational cluster approximation, taking into account N\'eel, 120$^\circ$ N\'eel,…

强关联电子 · 物理学 2015-06-18 A. Yamada

Paramagnetic solutions of the ionic Hubbard model at half-filling in dimensions $D>2$ indicate that the band and the Mott insulator phases are separated by a metallic phase. We present zero-temperature dynamical mean-field theory solutions,…

强关联电子 · 物理学 2009-11-13 Krzysztof Byczuk , Michael Sekania , Walter Hofstetter , Arno P. Kampf

Motivated by recent experiments of a novel 5$d$ Mott insulator in Sr$_2$IrO$_4$, we have studied the two-dimensional three-orbital Hubbard model with a spin-orbit coupling $\lambda$. The variational Monte Carlo method is used to obtain the…

强关联电子 · 物理学 2010-11-25 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

We study the magnetic properties around the Mott transition in the Kagom\'e lattice Hubbard model by the cellular dynamical mean field theory combined with quantum Monte Carlo simulations. By investigating the q-dependence of the…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Sei-ichiro Suga , Norio Kawakami , Hirokazu Tsunetsugu

Altermagnets are a novel class of materials that combine antiferromagnetic spin ordering with non-relativistic spin splitting (NRSS) in their band structure, making them promising candidates for spintronics applications without requiring…

强关联电子 · 物理学 2025-08-12 Niklas Sicheler , Roberto Raimondi , Giorgio Sangiovanni , Lorenzo Del Re

The antiferromagnetic ordering in Mott insulators upon lowering the temperature is accompanied by a transfer of the single-particle spectral weight to lower energies and a shift of the Mott gap to higher energies (magnetic blue shift, MBS).…

强关联电子 · 物理学 2022-11-11 Mohsen Hafez-Torbati , Frithjof B. Anders , Götz S. Uhrig

We report on a new electromagnetic phenomenon that emerges in Mott insulators, i.e., materials that do not conduct electricity because of strong electronic Coulomb repulsion. The phenomenon manifests as antiferromagnetic ordering due to…

强关联电子 · 物理学 2015-05-13 K. A. Al-Hassanieh , C. D. Batista , G. Ortiz , L. N. Bulaevskii

Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle…

强关联电子 · 物理学 2012-02-28 Masanori Kohno

We study metal-insulator transitions between Mott insulators and metals. The transition mechanism completely different from the original dynamical mean field theory (DMFT) emerges from a cluster extension of it. A consistent picture…

强关联电子 · 物理学 2007-07-18 Y. Z. Zhang , Masatoshi Imada

We study the Mott transition in a two-dimensional lattice spinless fermion model with nearest neighbors density-density interactions. By means of a two-dimensional Jordan-Wigner transformation, the model is mapped onto the lattice XXZ spin…

强关联电子 · 物理学 2011-06-16 Federico L. Bottesi , Guillermo R. Zemba

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…

介观与纳米尺度物理 · 物理学 2021-04-06 Nathan J. McLaughlin , Yoav Kalcheim , Albert Suceava , Hailong Wang , Ivan K. Schuller , Chunhui Rita Du

Correlated physics in nearly flat topological bands is a central theme in the study of moir\'e materials. While ground states at integer fillings are typically identified as quantum Hall ferromagnets within a Hartree-Fock framework, we…

强关联电子 · 物理学 2026-01-07 Boran Zhou , Ya-Hui Zhang

Sustaining exotic quantum mechanical phases at high temperatures is a long-standing goal of condensed matter physics. Among them, half-metals are spin-polarized conductors that are essential for realizing room-temperature spin current…

强关联电子 · 物理学 2022-03-22 Gour Jana , Abhishek Joshi , Subhajyoti Pal , Anamitra Mukherjee

In this article, I discuss W.Kohn's criterion for a metal insulator transition, within the framework of a one band Hubbard model. This and related ideas are applied to 1-dimensional Hubbard systems, and some intersting miscellaneous results…

凝聚态物理 · 物理学 2015-06-25 B. Sriram Shastry

Effects of spin-orbit coupling (SOC) on metal-Mott insulator transition (MMIT) and spin exchange physics (SEP) of two-component Fermi gases in two-dimension half-filling square optical lattices are investigated. In the frame of Kotliar and…

量子气体 · 物理学 2011-10-13 Beibing Huang , Shaolong Wan

Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…

强关联电子 · 物理学 2007-05-23 A. Liebsch

We present the influence of spin correlation on the metal-insulator transitions (MIT) in two-orbital Hubbard models by the Kotliar-Ruckenstein slave-boson approach. In the asymmetric half-filling situation, the two orbits simultaneously…

强关联电子 · 物理学 2015-03-19 Ya-Min Quan , Liang-Jian Zou , Hai-Qing Lin