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Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott…

Inspired by recent advances in the fabrication of surface superlattices, and in particular the triangular lattice made of tin (Sn) atoms on silicon, we study an extended Hubbard mode on a triangular lattice. The observations of magnetism in…

强关联电子 · 物理学 2025-02-17 Kun Woo Kim , T. Pereg-Barnea

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…

强关联电子 · 物理学 2022-06-22 Yan-Ling Xiong , Jia-Qi Guan , Rui-Feng Wang , Can-Li Song , Xu-Cun Ma , Qi-Kun Xue

In a solid material strong interactions between the electrons can lead to surprising properties. A prime example is the Mott insulator, where the suppression of conductivity is a result of interactions and not the consequence of a filled…

其他凝聚态物理 · 物理学 2010-01-21 Robert Jördens , Niels Strohmaier , Kenneth Günter , Henning Moritz , Tilman Esslinger

It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…

强关联电子 · 物理学 2024-09-16 P. -O. Downey , O. Gingras , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

We report on a phenomenological study of superfluid to Mott insulator transitions of bosons on the triangular lattice, focusing primarily on the interplay between Mott localization and geometrical charge frustration at 1/2-filling. A…

强关联电子 · 物理学 2009-11-11 A. A. Burkov , Leon Balents

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

Mott insulators with a half-filled band of electrons on the triangular lattice have been recently studied in a variety of organic compounds. All of these compounds undergo transitions to metallic/superconducting states under moderate…

强关联电子 · 物理学 2008-05-09 Yang Qi , Subir Sachdev

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

The suppression of antiferromagnetic ordering in geometrically frustrated Hubbard models leads to a variety of exotic quantum phases including quantum spin liquids and chiral states. Here, we focus on the Hubbard model on one of the…

量子气体 · 物理学 2022-07-15 Davis Garwood , Jirayu Mongkolkiattichai , Liyu Liu , Jin Yang , Peter Schauss

The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic…

Motivated by recent advances in transition metal dichalcogenide (TMD) moir\'e materials, we propose TMD moir\'e multilayers as a platform for realizing an approximately SU(4)-symmetric triangular Kondo lattice, generalizing the concept of…

强关联电子 · 物理学 2026-01-19 Sunghoon Kim

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

Semiconductor surfaces with narrow surface bands provide unique playgrounds to search for Mott-insulating state. Recently, a combined experimental and theoretical study [Phys. Rev. Lett. 114, 247602 (2015)] of the two-dimensional (2D) Sn…

材料科学 · 物理学 2016-01-18 Seho Yi , Hunpyo Lee , Jin-Ho Choi , Jun-Hyung Cho

Doping the distorted-perovskite Mott insulators LaTiO$_3$ and GdTiO$_3$ with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge…

材料科学 · 物理学 2015-05-08 Frank Lechermann , Michael Obermeyer

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of…

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with…

介观与纳米尺度物理 · 物理学 2007-05-23 S. V. Vyshenski , U. Zeitler , R. J. Haug

We have investigated the Mott transition in a quasi-two-dimensional Mott insulator EtMe$_3$P[Pd(dmit)$_2$]$_2$ with a spin-frustrated triangular lattice in hydrostatic pressure and magnetic field. In the pressure-temperature ($P$-$T$) phase…

强关联电子 · 物理学 2009-11-11 Yasuhiro Shimizu , Hikota Akimoto , Hiroyuki Tsujii , Akiko Tajima , Reizo Kato

The phase diagrams of quasi two-dimensional organic superconductors display a plethora of fundamental phenomena associated with strong electron correlations, such as unconventional superconductivity, metal-insulator transitions, frustrated…

强关联电子 · 物理学 2024-10-01 Henri Menke , Marcel Klett , Kazushi Kanoda , Antoine Georges , Michel Ferrero , Thomas Schäfer

Motivated by the realization of spin-valley Hubbard on triangular moir\'e superlattice in ABC trilayer graphene aligned with hexagon boron nitride (hBN) and possibly also in twisted transition metal dichalcogenide homobilayers, we study…

强关联电子 · 物理学 2020-01-22 Ya-Hui Zhang , Dan Mao
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