English

SU(4) Kondo Lattice in Semiconductor Moir\'e Materials

Strongly Correlated Electrons 2026-01-19 v2 Mesoscale and Nanoscale Physics

Abstract

Motivated by recent advances in transition metal dichalcogenide (TMD) moir\'e materials, we propose TMD moir\'e multilayers as a platform for realizing an approximately SU(4)-symmetric triangular Kondo lattice, generalizing the concept of the double quantum dot model. Our model extends the conventional Kondo lattice by incorporating a three-site exchange of SU(4) local moments, which drives spontaneous time-reversal and lattice symmetry breaking. Using a parton mean-field approach, we map out the phase diagram as a function of three-site exchange and hole doping. In the Kondo-unscreened regime, we identify Mott insulating phases, including bond-ordered states and a chiral spin liquid. With increasing doping, Kondo hybridization gives rise to a heavy Fermi liquid that exhibits distinct patterns of lattice symmetry breaking, with or without topological responses. We conclude with directions for future study.

Keywords

Cite

@article{arxiv.2509.18247,
  title  = {SU(4) Kondo Lattice in Semiconductor Moir\'e Materials},
  author = {Sunghoon Kim},
  journal= {arXiv preprint arXiv:2509.18247},
  year   = {2026}
}

Comments

5 pages, 4 figures. Supplementary material: 4 pages, 1 figure

R2 v1 2026-07-01T05:50:37.903Z