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相关论文: Hydrogen Surfactant Assisted Coherent Growth of Ga…

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Cu2ZnSnS4 (CZTS) is a promising thin-film solar-cell material consisted of earth abundant and nontoxic elements. Yet, there exists a fundamental bottle neck that hinders the performance of the device due to complexed intrinsic defects…

材料科学 · 物理学 2020-10-23 Kejie Bao , Haolin Liu , Kinfai Tse , Chunlei Yang , Guohua Zhong , Junyi Zhu

GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapour phase, and oxygen may be included at this stage. Oxidation represents…

材料科学 · 物理学 2013-10-14 Adam J. Jackson , Aron Walsh

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis…

材料科学 · 物理学 2019-03-11 Alka Sharma , T D Senguttuvan , V N Ojha , Sudhir Husale

Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of…

化学物理 · 物理学 2015-09-01 Avinash Patsha , S. Amirthapandian , Ramanathaswamy Pandian , S. Dhara

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are…

Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial…

Hexagonal boron nitride (hBN)-long-known as a thermally stable ceramic-is now available as atomically smooth, single-crystalline flakes, revolutionizing its use in optoelectronics. For nanophotonics, these flakes offer strong…

Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs…

材料科学 · 物理学 2020-08-11 Matthew Sparks , Oscar Kennedy , Paul Warburton

Heterostructures comprising uncoated ZnO and coated with thin layers of Ga$_2$O$_3$ were produced using spin-coating and subsequent hydrothermal processing. X-ray diffraction examination verifies the structural integrity of the synthesized…

材料科学 · 物理学 2025-06-25 Shashi Pandey , Swaroop Ganguly , Alok Shukla , Anurag Tripathi

Molybdenum disulfide (MoS2) has emerged as a promising, cost-effective catalyst for hydrogen production via water splitting. We investigate the structural and electrocatalytic properties of MoS2 thin films deposited on different substrates…

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and…

材料科学 · 物理学 2015-06-25 C. Liu , S. H. Chang , T. W. Noh , M. Abouzaid , P. Ruterana , H. H. Lee , D. -W. Kim , J. -S. Chung

Several ten $\mu$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam…

The use of a novel three-dimensional graphene structure allows circumventing the limitations of the two-dimensional nature of graphene and its application in hydrogen absorption. Here we investigate hydrogen-bonding on monolayer graphene…

The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different…

GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the…

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure,…

Cuprous oxide (Cu2O) films from 25 nm to 1500 nm were electrodeposited on n-Si(100) and Ni/n-Si(100) substrates from aqueous solution at room temperature. X-ray diffraction and transmission electron microscopy imaging show that the Cu2O…

The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally…

In this work, nonlinear optical properties of Na: ZnO thin films (Na: ZnO) have been experimentally elaborated. The principal possibility to operate the nonlinear optical features using external laser beams is shown. The Na: ZnO films were…

The adsorption of hydrogen on the polar Zn-ended ZnO(0001) surface has been investigated by density functional {\it ab-initio} calculations. An on top H(1x1) ordered overlayer with genuine H-Zn chemical bonds is shown to be energetically…

材料科学 · 物理学 2015-05-13 N. Sanchez , S. Gallego , J. Cerdá , M. C. Muñoz