相关论文: High frequency optomechanical disk resonators in I…
Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy…
We present an experimental and numerical study of a terahertz metamaterial with a nonlinear response that is controllable via the relative structural positioning of two stacked split ring resonator arrays. The first array is fabricated on…
Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. However, for photonics, the high-Sn content required leads to…
The spectacular success of silicon-based photonic integrated circuits (PICs) in the past decade naturally begs the question of whether similar fabrication procedures can be applied to other material platforms with more desirable optical…
Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum…
This paper introduces tunable and switchable Perfect Absorbers (PAs) operating within the mid-infrared spectrum, specifically targeting the 3 to 5 um range at 0.25 um intervals. This spectrum is engineered for minimal atmospheric absorption…
We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors $ > 2.8\times10^{5}$ and mode volumes $< 10 (\lambda/n)^3$, and study their nonlinear and optomechanical properties. For optical intensities up…
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated…
We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The…
We demonstrate mid-IR integrated race-track resonators on a III-V semiconductor platform,InGaAs core epitaxially grown on InP. We have performed a complete characterization of the optical propagation losses at wavelength = 4.6 um and…
Cavity-enhanced radiation-pressure coupling of optical and mechanical degrees of freedom gives rise to a range of optomechanical phenomena, in particular providing a route to the quantum regime of mesoscopic mechanical oscillators. A prime…
Nanophotonic objects like plasmonic nanoparticles and colloidal quantum dots can complement the functionality of molecular dyes in biomedical optics. However, their operation is usually governed by spontaneous processes, which results in…
Secure communications with quantum key distribution over fiber-optic links is one of the few recognized applications of quantum physics at the level of individual quanta -- single C-band photons. Currently, the widely used sources of such…
We provide evidence of strongly confined coherent acoustic phonons inside high quality factor phononic cavities that exhibit tailoredphonon potentials. Using GaAs/AlAs quasiperiodic superlattices, these functional phonon potentials are…
Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 {\mu}m) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon…
Flat-optics platforms offer new opportunities for the generation of entangled photons by relaxing traditional phase-matching constraints, enabling the use of a broader range of nonlinear materials. Among these, gallium arsenide and aluminum…
Photonic integrated circuits (PICs) have been acknowledged as the promising platforms for the applications in data communication, Lidar in autonomous driving vehicles, innovative sensor technology, etc. Since the demonstration of optical…
Semiconductor quantum dots (QDs) are key building blocks for photonic quantum technologies, enabling practical sources of non-classical light. A central challenge for scalable integration is the direct epitaxial growth of high-quality…
Strained coherent heteroepitaxy of III-V semiconductor films such as In$_x$Ga$_{1-x}$As/GaAs has potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other…
In this paper, we report on the method of nondestructive quality control that can be used in fabrication of GaAs high-speed electronics. The method relies on the surface potential mapping and enables rigid in vivo analysis of transport…