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Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated…

介观与纳米尺度物理 · 物理学 2018-03-15 Peize Han , Luke St. Marie , Qing X. Wang , Nicholas Quirk , Abdel El Fatimy , Masahiro Ishigami , Paola Barbara

Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…

应用物理 · 物理学 2019-05-24 David Maeso , Andres Castellanos-Gomez , Nicolas Agraït , Gabino Rubio-Bollinger

A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined…

材料科学 · 物理学 2013-10-31 Zongyou Yin , Hai Li , Hong Li , Lin Jiang , Yumeng Shi , Yinghui Sun , Gang Lu , Qing Zhang , Xiaodong Chen , Hua Zhang

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible…

Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor…

One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…

材料科学 · 物理学 2013-08-13 Mohammad R. Esmaeili-Rad , Sayeef Salahuddin

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…

介观与纳米尺度物理 · 物理学 2023-03-07 Hon-Loen Sinn , Aravindh Kumar , Eric Pop , Akm Newaz

Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…

仪器与探测器 · 物理学 2023-03-28 Rakesh K. Prasad , Koushik Ghosh , P. K. Giri , Dai-Sik Kim , Dilip K. Singh

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport…

The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using…

介观与纳米尺度物理 · 物理学 2015-12-09 Haining Wang , Changjian Zhang , Weimin Chan , Sandip Tiwari , Farhan Rana

Molybdenum disulfide (MoS$_2$) nanoribbons have attracted increased interest due to their properties which can be tailored by tuning their dimensions. Herein, we demonstrate the growth of highly crystalline quasi-one-dimensional (1D)MoS$_2$…

The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcognides (TMDC). Possibility to synthesize these ultrathin TMDC…

材料科学 · 物理学 2022-07-01 Shubhrasish Mukherjee , Didhiti Bhattacharya , Samit Kumar Ray , Atindra Nath Pal

Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…

Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interaction with light. Integrating them into optical fibers yields…

Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carrier mobility properties of monolayer MoS2 for functional…

材料科学 · 物理学 2018-11-14 Paul Quayle , Bin Zhang , Jacob Leach , Brian Bersch , Joshua Robinson , Shanee Pacley

Monolayer transition metal dichalcogenides (e.g., MoS2) exhibit exceptionally large optical nonlinearities for high-order nonlinear light generation (NLG), yet their inherent atomic thickness fundamentally limits light-matter interactions…

We fabricated the 1D nanoscrolled monolayer MoS2 (1L-MoS2) with superior characteristics from 1L-MoS2 film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which…

材料科学 · 物理学 2024-02-22 C. Abinash Bhuyan , Kishore K. Madapu , K. Prabakar , K. Ganesan , A. Pandian , Sandip Dhara

Strong light absorption, coupled with moderate carrier transport properties, makes two-dimensional (2-D) layered transition metal dichalcogenide (TMD) semiconductors promising candidates for low intensity photodetection applications.…

介观与纳米尺度物理 · 物理学 2018-02-15 Sangeeth Kallatt , Smitha Nair , Kausik Majumdar

We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS$_2$) - silicon dioxide (SiO$_2$) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS$_2$ photoluminescence…

We present an easy drop-casting based functionalization of MoS2-based photodetectors that results in an enhancement of the photoresponse of about four orders of magnitude, reaching responsivities up to 100 A/W. The functionalization is…

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