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相关论文: Gapless excitations in the ground state of 1T-TaS$…

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1T-TaS$_2$ undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott…

强关联电子 · 物理学 2020-08-26 Y. D. Wang , W. L. Yao , Z. M. Xin , T. T. Han , Z. G. Wang , L. Chen , C. Cai , Yuan Li , Y. Zhang

1T-TaS$_2$ is a prototypical charge-density-wave (CDW) system with a Mott insulating ground state. Usually, a Mott insulator is accompanied by an antiferromagnetic state. However, the antiferromagnetic order had never been observed in…

When a Mott metal-insulator transition is inhibited by a small amount of disorder in the layered dichalcogenide 1T-TaS$_2$, an inhomogeneous superconducting state arises below T=2.1 K, and coexists with a nearly-commensurate…

强关联电子 · 物理学 2010-05-18 P. Xu , J. O. Piatek , P. -H. Lin , B. Sipos , H. Berger , L. Forró , H. M. Rønnow , M. Grioni

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2…

强关联电子 · 物理学 2017-12-06 Shuang Qiao , Xintong Li , Naizhou Wang , Wei Ruan , Cun Ye , Peng Cai , Zhenqi Hao , Hong Yao , Xianhui Chen , Jian Wu , Yayu Wang , Zheng Liu

The compounds 1T-TaX2 (X = S, Se) and 1T-NbSe2 have been considered as potential hosts of a quantum spin liquid phase. This is based on the widely held view that the Mott-Hubbard mechanism drives the insulating behaviour of its charge…

强关联电子 · 物理学 2025-09-23 C. J. Butler , M. Naritsuka , T. Hanaguri

The superconducting TMD 4Hb-TaS$_2$ consists of alternating layers of H and T structures, which in their bulk form are metallic and Mott-insulating, respectively. Recently, this compound has been proposed as a candidate chiral…

超导电性 · 物理学 2021-06-30 David Dentelski , Ezra Day-Roberts , Turan Birol , Rafael M. Fernandes , Jonathan Ruhman

1T-tantalum disulphide (1T-TaS2) is a promising material to realize quantum spin liquid state and fractional excitations. Here, we take a closer look on the temperature dependent magnetic susceptibility of 1T-TaS2 at low magnetic fields to…

强关联电子 · 物理学 2022-07-28 Sudip Pal , S. B. Roy

Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal…

强关联电子 · 物理学 2020-05-29 Kunliang Bu , Wenhao Zhang , Ying Fei , Zongxiu Wu , Yuan Zheng , Jingjing Gao , Xuan Luo , Yu-Ping Sun , Yi Yin

Strong electron correlation drives 1T-TaS2 from a half-filled metallic state into a Mott insulating phase, coexisting with a charge density wave at low temperatures. Under external stimuli such as pressure or ionic gating, superconductivity…

强关联电子 · 物理学 2026-03-04 Haiyang Chen , Zhiqiang Sun , Peng Chen

1T-TaS$_2$ is unique among transition metal dichalcogenides in that it is understood to be a correlation driven insulator, where the unpaired electron in a 13 site cluster experiences enough correlation to form a Mott insulator. We argue…

强关联电子 · 物理学 2017-07-18 K. T. Law , Patrick A. Lee

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

强关联电子 · 物理学 2020-06-24 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

Here we report a comprehensive inelastic light scattering studies on 1T-TaS2 with different thickness. This compound is well known for its rich charge density wave phases. Along with that it has been one of the promising candidates for a…

强关联电子 · 物理学 2025-05-06 Vivek Kumar , Birender Singh , Pradeep Kumar

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such…

介观与纳米尺度物理 · 物理学 2016-03-22 Damjan Svetin , Igor Vaskivskyi , Serguei Brazovskii , Dragan Mihailovic

Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition,…

The layered transition metal dichalcogenide compounds 1T-TaS2 and 4H-TaS2 are well known for their exotic properties, which include charge density wave, superconductivity, Mott transition, etc., and lately quantum spin liquid. Here, we…

The origin of the insulating state in 1T-TaS$_2$ has long been a subject of debate. A short current pulse transforms this insulating state into a metastable metallic phase. Using micro-ARPES, we investigate the electronic structure of this…

New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS$_2$ have revived interests in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy…

强关联电子 · 物理学 2022-01-11 Zongxiu Wu , Kunliang Bu , Wenhao Zhang , Ying Fei , Yuan Zheng , Jingjing Gao , Xuan Luo , Zheng Liu , Yu-ping Sun , Yi Yin

Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies…

We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy…

We present the ultra-low-temperature thermal conductivity measurements on single crystals of the prototypical charge-density-wave material 1$T$-TaS$_2$, which was recently argued to be a candidate for quantum spin liquid. Our experiments…

强关联电子 · 物理学 2017-10-16 Y. J. Yu , Y. Xu , L. P. He , M. Kratochvilova , Y. Y. Huang , J. M. Ni , Lihai Wang , Sang-Wook Cheong , Je-Geun Park , S. Y. Li
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