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相关论文: Self-compensation in phosphorus-doped CdTe

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Recent photoemission spectroscopy measurements (T. J. Reber et al., arXiv:1509.01611) of cuprate superconductors have inferred that the self-energy exhibits critical scaling over an extended doping regime, thereby calling into question the…

强关联电子 · 物理学 2018-11-07 Zhidong Leong , Kridsanaphong Limtragool , Chandan Setty , Philip W. Phillips

Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here a comprehensive density functional theory-based investigation of 7 kinds of point defects in a recently produced {\gamma}…

材料科学 · 物理学 2021-03-15 Andrey A. Kistanov , Vladimir R. Nikitenko , Oleg V. Prezhdo

Traditionally, the formation of off-stoichiometric compounds is believed to be the growth effect rather than the intrinsic tendency of the system. However, here, using the example of La3Te4, we demonstrate that in n-type gapped metals…

The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn$_{1-x}$Cr$_{x}$Te. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a…

材料科学 · 物理学 2009-11-11 Nobuhiko Ozaki , Nozomi Nishizawa , Stephane Marcet , Shinji Kuroda , Osamu Eryu , Koki Takita

Unconventional superconductivity in molecular conductors is observed at the border of metal-insulator transitions in correlated electrons under the influence of geometrical frustration. The symmetry as well as the mechanism of the…

超导电性 · 物理学 2019-07-24 Hiroshi Watanabe , Hitoshi Seo , Seiji Yunoki

The elusive X-Defect, a defect found in low-resistivity $p$-type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i}$ defect (Boron-interstitial-Oxygen-interstitial complex)…

We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2…

材料科学 · 物理学 2007-05-23 W. Maslana , M. Bertolini , H. Boukari , P. Kossacki , D. Ferrand , J. A. Gaj , S. Tatarenko , J. Cibert

First-principles calculations are employed to explore avenues to increase the N\'eel temperature ($T_{\mathrm{N}}$) of the magnetoelectric antiferromagnet Cr$_2$O$_3$ through doping. Employing the hybrid functional method, we calculate the…

材料科学 · 物理学 2025-06-13 Xuecong Wang , Sai Mu

We use the density-functional theory to calculate the total energy of mixed crystals (Ga,Mn)As with a small concentration of various donors. We find that the formation energy of Mn depends strongly on the partial concentrations of Mn in the…

材料科学 · 物理学 2007-05-23 J. Masek , I. Turek , J. Kudrnovsky , F. Maca , V. Drchal

By means of a multi-scale first-principles approach, a description of the local electronic structure of two-dimensional and narrow phosphorene sheets with various types of modifications is presented. First, a rational argument based on the…

材料科学 · 物理学 2016-02-03 Alejandro Lopez-Bezanilla

We consider a quantum-critical metal with interaction mediated by fluctuations of a critical order parameter. This interaction gives rise to two competing tendencies -- pairing and non-Fermi liquid behavior. Due to competition, the pairing…

超导电性 · 物理学 2019-06-05 Artem Abanov , Yi-Ming Wu , Yuxuan Wang , Andrey V. Chubukov

Different dopants with their specific dopant concentration can be utilized to produce ferroelectric HfO$_2$ thin films. In this work it is explored for the example of Sr in a comprehensive first-principles study. Density functional…

材料科学 · 物理学 2017-08-28 Robin Materlik , Christopher Künneth , Thomas Mikolajick , Alfred Kersch

We present an {\it ab initio} study of the recently discovered superconductivity of boron doped diamond within the framework of a phonon-mediated pairing mechanism. The role of the dopant, in substitutional position, is unconventional in…

超导电性 · 物理学 2009-11-10 Xavier Blase , Ch Adessi , Damien Connetable

We present a microscopic model for `electron doped' $Nd_{2-x}Ce_xCuO_4$ family and offer a resolution to a long standing doping asymmetry puzzle. Here, i) Ce atoms do not dope free electrons, instead a Ce atom effectively quenches a…

强关联电子 · 物理学 2007-05-23 G. Baskaran

We analyze enhancements in the magnitude of the self-energy for electrons far away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole…

强关联电子 · 物理学 2016-01-11 J. Merino , O. Gunnarsson , G. Kotliar

Two-dimensional (2D) $\beta$-TeO$_2$ has gained attention as a promising material for optoelectronic and power device applications, thanks to its transparency and high hole mobility. However, the underlying mechanism behind its $p$-type…

介观与纳米尺度物理 · 物理学 2025-01-08 Rafael Costa-Amaral , Soungmin Bae , Vu Thi Ngoc Huyen , Yu Kumagai

Using Density functional theory (DFT) in conjunction with a solvation model we have investigated the phenomenon of eletrode-electrolyte interaction at the electrode surface and its consequences on the electrochemical properties like the…

材料科学 · 物理学 2022-04-20 Mandira Das , Subhradip Ghosh

The filled-skutterudite compound CePt4Ge12 is situated close to the border between intermediate-valence of Ce and heavy-fermion behavior. Substitution of Ge by Sb drives the system into a strongly correlated and ultimately upon further…

We discuss the mechanism responsible for the observed improvement in the structural properties of In doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can…

材料科学 · 物理学 2015-02-23 Zs. Rak , S. D. Mahanti , K. C. Mandal , N. C. Fernelius

An incommensurate modulated structure was found recently in a light group V element phosphorous in the phase P-IV stable in the pressure range 107-137 GPa. We consider configurations of the Brillouin zone and Fermi sphere within a…

材料科学 · 物理学 2015-05-14 Valentina F. Degtyareva