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Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

The electrical and optical properties of flat and planar buckled siligraphene (SiC) monolayer are examined using a first principles approach. Buckling between the Si and the C atoms in SiC structures influences and impacts the properties of…

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that…

介观与纳米尺度物理 · 物理学 2015-05-25 Jiagui Feng , Sean Wagner , Pengpeng Zhang

We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\sqrt3\times6\sqrt3)R30^{\circ}$ surface…

介观与纳米尺度物理 · 物理学 2012-01-17 I. Deretzis , A. La Magna

Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral…

The geometric and electronic properties of Bi-adsorbed monolayer graphene, enriched by the strong effect of substrate, are investigated by first-principles calculations. The six-layered substrate, corrugated buffer layer, and slightly…

材料科学 · 物理学 2016-08-24 S. Y. Lin , S. L. Chang , H. H. Chen , S. H. Su , J. C. A. Huang , M. -F. Lin

We study the effects of dissipation and time-independent nonequilibrium drive on an open superconducting graphene. In particular, we investigate how dissipation and nonequilibrium effects modify the semi-metal-BCS quantum phase transition…

强关联电子 · 物理学 2009-11-13 So Takei , Yong Baek Kim

The realization of the unusual properties of 2-d materials requires the formation of large domains of single layer thickness, extending over the mesoscale. It is found that the formation of ideal graphene on SiC, contrary to textbook…

介观与纳米尺度物理 · 物理学 2019-10-30 S. Chen , M. Horn von Hoegen , P. A. Thiel , M. C. Tringides

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show…

介观与纳米尺度物理 · 物理学 2011-03-07 I. Deretzis , A. La Magna

Within first-principles calculations, we explore superconductivity in Ca-intercalated bilayer silicene compound, Si2CaSi2. This arises from the coupling of interlayer flower-like \Gamma-centered Fermi surface formed by the hybridization of…

超导电性 · 物理学 2024-03-06 Jisvin Sam , Sasmita Mohakud , Katsunori Wakabayashi , Sudipta Dutta

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…

材料科学 · 物理学 2015-05-27 C. Mathieu , N. Barrett , J. Rault , Y. Y. Mi , B. Zhang , W. A. de Heer , C. Berger , E. H. Conrad , O. Renault

Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon…

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the…

The available synthesized silicene-like structures have been only realized on metallic substrates which are very different from the standalone buckled silicene, e.g. the Dirac cone of silicene is destroyed due to lattice distortion and the…

介观与纳米尺度物理 · 物理学 2015-06-19 M. Neek-Amal , A. Sadeghi , G. R. Berdiyorov , F. M. Peeters

Multi-layer graphene on the carbon face of silicon carbide is an intriguing electronic system which typically consists of a stack of ten or more layers. Rotational stacking faults in this system dramatically reduce inter-layer coherence. In…

介观与纳米尺度物理 · 物理学 2010-09-01 Rosario E. V. Profumo , Marco Polini , Reza Asgari , Rosario Fazio , A. H. MacDonald

We present a structural analysis of the graphene/Ru(0001) system obtained by surface x-ray diffraction. The data were fit using Fourier-series expanded displacement fields from an ideal bulk structure, plus the application of symmetry…

High-temperature superconductivity confined to nanometer-size interfaces has been a long standing goal because of potential applications^{1,2} and the opportunity to study quantum phenomena in reduced dimensions^{3,4}. However, this is a…

Graphane is graphene fully hydrogenated from both sides, forming a 1x1 structure, where all C atoms are in sp3 configuration. In silicene, the Si atoms are in a mix-sp2/sp3 configuration, it is therefore natural to imagine silicane in…

材料科学 · 物理学 2015-07-16 Jinglan Qiu , Huixia Fu , Yang Xu , Qing Zhou , Sheng Meng , Hui Li , Lan Chen , Kehui Wu

We present a comprehensive investigation of the structural and electronic properties of Sn intercalated buffer layers on SiC(0001) using low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS), spot-profile analysis…

介观与纳米尺度物理 · 物理学 2025-12-24 Huu Thoai Ngo , Zamin Mamiyev , Niklas Witt , Tim Wehling , Christoph Tegenkamp

This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical…