相关论文: Optical switching of defect charge states in 4H-Si…
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies…
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide…
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed…
Divacancy in its neutral charge state (V$_\text{C}$V$_\text{Si}^0$) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC four different V$_\text{C}$V$_\text{Si}$ configurations can…
Negatively charged silicon vacancy centers in diamond (SiV$^-$) are promising for quantum photonic technologies. However, when subject to resonant optical excitation, they can inadvertently transfer into a zero-spin optically dark state. We…
Electrical modulation and switching of photoluminescence (PL) have been demonstrated in pure deformed helix ferroelectric liquid crystal (DHFLC) material. The PL intensity increases and peak position shifts towards lower wavelength above a…
The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divacancy in 4H-SiC, whereas the divacancies in 6H- and 3C-SiC…
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with…
We observed electromagnetically induced transparency (EIT) and dark fluorescence in a cascade three-level diatomic Lithium system using Optical-Optical Double Resonance (OODR) spectroscopy. When a strong coupling laser couples the…
We optically probe the spectrum of ground and excited state transitions of an individual, electrically tunable self-assembled quantum dot molecule. Photocurrent absorption measurements show that the spatially direct neutral exciton…
Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…
We studied the influence of defect states on the laser excitation process in silicon using time-dependent density functional theory. We assumed two types of point defects: interstitial oxygen and silicon vacancies. We found that the…
The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing…
Halide perovskites have indisputably exceptional optical and electronic properties, which are attractive for next-generation optoelectronic device technologies. We report on a reversible photoluminescence (PL) peak in iodide-based…
Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the…
In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications in quantum technology, the divacancy and the…
We report experimental observations of interference between three-photon and one-photon excitations, and phase control of light attenuation/transmission in a four-level system. Either constructive interference or destructive interference…
We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of…
The first-principal simulations are applied to study a photo-induced metastability in amorphous selenium (a-Se) and the contribution of the valence-alteration pair (VAP) defects in this process. The VAP defect is confirmed to be the…
Coherent dark states in atoms, created by simultaneous interaction of two coherent light fields with a 3-level system, are of prime importance in quantum state manipulation. They are used extensively in quantum sensing and quantum…