相关论文: A Thermodynamic Perspective of Negative-capacitanc…

Electric field-induced studies, including phase transition and polarization hysteresis, for ferroelectric HfO2 at the atomic scale are critical since they can largely affect its application in ferroelectric and dielectric devices. However,…

We consider a standard Ginzburg-Landau model of a ferroelectric whose electrical polarization is coupled to gradients of elastic strain. At the harmonic level, such flexoelectric interaction is known to hybridize acoustic and optic phonon…

We develop a unified, single-scale description of thermodynamics and quantum oscillations in electronic systems with a uniform areal density of screw dislocations under a uniform magnetic field. A single tunable gap, $\hbar|\omega_{eff}|$…

The Landau theory of phase transitions has been re-examined under the framework of a modified mean field theory in ferroelectrics. By doing so, one can see that there are two atomic movements involved in the ferroelectric phase transition;…

Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…

Polycrystalline hafnia-based thin films exhibit mixed ferroelectric (FE), antiferroelectric (AFE), and dielectric (DE) behavior, with switching characteristics strongly influenced by microstructure and phase distribution. Here, we develop a…

In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…

The boundary conditions, customarily used in the Landau-type approach to ferroelectric thin films and nanostructures, have to be modified to take into account that a surface of a ferroelectric (FE) is a defect of the ``field'' type. The…

We study the thermodynamics of the Hamiltonian Mean Field (HMF) model with an external potential playing the role of a "magnetic field". If we consider only fully stable states, this system does not present any phase transition. However, if…

Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…

The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much attention. Recently, we modeled this effect in the…

Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…

We investigate the exchange bias and training effects in the FM/AF heterostructures using a unified Monte Carlo dynamical approach. This real dynamical method has been proved reliable and effective in simulating dynamical magnetization of…

We present a study based on numerical simulations and comparative analysis of recent experimental data concerning the operation and design of FeFETs. Our results show that a proper consideration of charge trapping in the…

This study presents a theoretical investigation of the physical mechanisms governing small signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide. Utilizing a time-dependent Ginzburg Landau formalism-based 2D multi-grain…

We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach and shown that…

We give detailed analysis of the effect of depolarizing field in nanometer-size ferroelectric capacitors studied by Kim et al. [Phys. Rev. Lett. 95, 237602 (2005)]. We calculate a critical thickness of the homogeneous state and its…

High-temperature superconductors (HTSC) and heavy-fermion (HF) metals exhibit extraordinary properties. They are so unusual that the traditional Landau paradigm of quasiparticles does not apply. It is widely believed that utterly new…

Self-consistent Hartree-Fock approximation combined with solutions of the Bethe-Salpeter equation offers a powerful tool for studies of strong correlation effects arising in condensed matter models, nuclear physics, quantum field theories,…

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…