相关论文: Gate-tunable large magnetoresistance in an all-sem…

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…

Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in…

We investigate ballistic spin transport in a two dimensional electron gas system through magnetic barriers of various geometries using the transfer matrix method. While most of the previous studies have focused on the effect of magnetic…

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…

The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…

We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin…

We consider spin transport and spin relaxation in superconductors using the quasiclassical theory of superconductivity. We include spin relaxation due to spin-orbit interaction as well as magnetic impurities, and show that the energy…

Bilinear magnetoresistance has been studied theoretically in 2D systems with isotropic cubic form of Rashba spin-orbit interaction. We have derived the effective spin-orbital field due to current-induced spin polarization and discussed its…

According to Onsager's principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by…

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…

We propose a two-dimensional electron gas (2DEG) system in which an external magnetic (B) field with a small chirality is applied to provide a topological U(1) U(1) gauge field that separates conduction electrons of opposite spins in the…

Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and…

The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…

Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to…

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…

Across many areas of science, there is a need to generate magnetic fields that are both ultra-stable and switchable on and off. While permanent and superconducting magnets offer exceptionally low-noise fields, they are not readily…

Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be…

We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

Recent experimental measurements of magnetoresistance in dual spin valves [A. Aziz et al., Phys. Rev. Lett. 103, 237203 (2009)] reveal some nonlinear features of transport, which have not been observed in other systems. We propose a…