We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.
@article{arxiv.1609.05859,
title = {Spin-dependent transport and current modulation in a current-in-plane field-effect transistor},
author = {Toshiki Kanaki and Tomohiro Koyama and Daichi Chiba and Shinobu Ohya and Masaaki Tanaka},
journal= {arXiv preprint arXiv:1609.05859},
year = {2016}
}