In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that inverting the ferroelectric polarization in a Sc2CO2 monolayer can effectively modulate the electronic states of a VSi2N4 monolayer, enabling a transition from half-metal to half-semiconductor. This transition significantly alters the electronic transport properties. Furthermore, we construct a Spin-FET device based on this multiferroic heterostructure and observe that the VSi2N4/Sc2CO2-based Spin-FET exhibits exceptional all-electric-controlled performance. Notably, the inversion of the Sc2CO2 ferroelectric polarization yields a substantial on-off current ratio, approximately 650\%, under a minimal bias voltage of 0.02 V. Additionally, we identify a unique spatially-separated spin-polarized transport phenomenon, wherein pure spin-up electrons transport exclusively through VSi2N4, and spin-down electrons through Sc2CO2. Our findings suggest a promising pathway for developing low-energy-dissipation and nonvolatile FET devices.
@article{arxiv.2311.03690,
title = {Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure},
author = {Xian Zhang and Bang Liu and Junsheng Huang and Xinwei Cao and Yunzhe Zhang and Zhi-Xin Guo},
journal= {arXiv preprint arXiv:2311.03690},
year = {2024}
}