中文
相关论文

相关论文: On melting of boron subnitride B13N2 under pressur…

200 篇论文

Melting of boron subphosphide (B12P2) to 26 GPa has been studied by in situ synchrotron X-ray powder diffraction in a laser-heated diamond anvil cell, and by quenching and electrical resistance measurements in a toroid-type high-pressure…

Melting of cubic boron phosphide, BP has been studied at pressures to 9 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa BP melts congruently, and the melting curve…

材料科学 · 物理学 2015-12-24 Vladimir L. Solozhenko , Vladimir A. Mukhanov

Melting of orthorhombic boron silicide B6Si has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements and quenching. It has been found that in the 2.6-7.7 GPa range B6Si melts congruently, and the melting…

材料科学 · 物理学 2020-11-09 Vladimir L. Solozhenko , Vladimir A. Mukhanov , Vadim V. Brazhkin

The pressure dependence of melting temperatures for boron carbide and B4C-carbon eutectic has been studied up to 8 GPa, and it was found that in both cases the melting curves exhibit negative slope (-13\pm6 K/GPa), that is indicative of…

材料科学 · 物理学 2012-06-07 Vladimir A. Mukhanov , Petr S. Sokolov , Vladimir L. Solozhenko

Microstructure and mechanical properties of bulk polycristalline rhombohedral boron subnitride B13N2 synthesized by crystallization from the B-BN melt at 7 GPa have been systematically studied by micro- and nanoindentation, atomic force…

材料科学 · 物理学 2017-12-08 Vladimir L. Solozhenko , Volodymyr Bushlya

New boron subnitride B50N2 has been synthesized by crystallization from the B-BN melt at 5 GPa, and its structure has been refined using Rietveld analysis. B50N2 crystallizes in the tetragonal space group P-4n2 with unit cell parameters a =…

材料科学 · 物理学 2017-10-20 Kirill A. Cherednichenko , Vladimir L. Solozhenko

Phase relations in the B-BN system have been studied ex situ and in situ at pressures 2-20 GPa and temperatures up to 2800 K. The evolution of topology of the B-BN phase diagram has been investigated up to 24 GPa using models of…

材料科学 · 物理学 2018-04-20 Vladimir L. Solozhenko , Vladimir Z. Turkevich

The electrical conductivity of melts of boron and its carbide (B4C), nitride (BN), and phosphide (BP) has been studied at pressures to 7.7 GPa and temperatures to 3500 K. It has been shown that these melts are good conductors with specific…

材料科学 · 物理学 2016-01-28 Vladimir A. Mukhanov , Vladimir L. Solozhenko

Compressibility of boron subarsenide B12As2 has been studied by synchrotron X-ray diffraction up to 47 GPa at room temperature in a diamond anvil cell using Ne pressure transmitting medium. A fit of experimental p-V data by Vinet equation…

材料科学 · 物理学 2018-07-16 Kirill A. Cherednichenko , Yann Le Godec , Vladimir L. Solozhenko

Two new methods to produce nanopowders of B12P2 boron subphosphide by self-propagating high-temperature synthesis have been proposed. Bulk polycrystalline B12P2 with microhardness of HV = 35(3) GPa and stability in air up to 1300 K has been…

High-pressure phase of boron oxide, orthorhombic \b{eta}-B2O3, has been studied in situ by synchrotron X-ray diffraction to 22 GPa and Raman scattering to 46 GPa at room temperature. The bulk modulus of \b{eta}-B2O3 has been found to be…

Compressibility of boron subphosphide B12P2 has been studied under quasi-hydrostatic conditions up to 26 GPa and 2600 K using laser-heated diamond anvil cell and angle-dispersive synchrotron X-ray diffraction. 300-K data fit yields the…

Black phosphorus (bP) is a crystalline material that can be seen as ordered stackings of two-dimensional layers, which lead to outstanding anisotropic physical properties. The knowledge of its pressure-temperature (P-T) phase diagram, and…

Different phases of solid boron under high pressure are studied by first principles calculations. The $\alpha$-B$_{12}$ structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero…

材料科学 · 物理学 2009-11-07 Jijun Zhao , Jian Ping Lu

The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T)…

强关联电子 · 物理学 2015-05-30 A. T. Satya , Awadhesh Mani , A. Arulraj , N. V. Chandra Shekar , K. Vinod , C. S. Sundar , A. Bharathi

The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.

Crystal structure searching and ab initio calculations have been used here to explore low-energy structures of boron carbides under high pressure. Under pressures of 85-110 GPa, a metastable B6C with R-3m symmetry is found to be…

材料科学 · 物理学 2018-01-01 Kang Xia , Mengdong Ma , Cong Liu , Hao Gao , Qun Chen , Julong He , Jian Sun , Hui-Tian Wang , Yongjun Tian , Dingyu Xing

Using first-principles molecular dynamics, we calculated the equation of state and shock Hugoniot of various boron phases. We find a large mismatch between Hugoniots based on existing knowledge of the equilibrium phase diagram and those…

材料科学 · 物理学 2020-08-21 Shuai Zhang , Heather D. Whitley , Tadashi Ogitsu

Several important geophysical features such as heat flux at the Core-Mantle Boundary or geodynamo production are intimately related with the temperature profile in the Earth's core. However, measuring the melting curve of iron at conditions…

We report a combined experimental and theoretical study of the melting curve and the structural behavior of vanadium under extreme pressure and temperature. We performed powder x-ray diffraction experiments up to 120 GPa and 4000 K,…

‹ 上一页 1 2 3 10 下一页 ›