相关论文: Electron-Hole Symmetry Breaking in Charge Transpor…

Being a true two-dimensional crystal, graphene has special properties. In particular, a point-like defect in graphene may have effects in the long range. This peculiarity questions the validity of using a supercell geometry in an attempt to…

We report on asymmetric electron-hole decoherence in epitaxial graphene gated by an ionic liquid. The observed negative magnetoresistance near zero magnetic field for different gate voltages, analyzed in the framework of weak localization,…

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of…

We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…

Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of…

Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However,…

We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically…

Non-diffusive effects in charge transport become relevant as device sizes and features become comparable to the electronic mean free path. As a model system, we investigate the electric transport around mesoscopic defects in graphene with…

A remarkable manifestation of the quantum character of electrons in matter is offered by graphene, a single atomic layer of graphite. Unlike conventional solids where electrons are described with the Schrodinger equation, electronic…

A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole)…

The effect of Coulomb scattering on graphene conductivity in field effect transistor structures is discussed. Inter-particle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into…

This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to…

We investigate the conductivity of doped graphene in the semiclassical Boltzmann limit, as well as the conductivity minimum within the self-consistent transport theory. Using the hard-disk model for a two-dimensional distribution of…

Prompted by recent reports on $\sqrt{3} \times \sqrt{3}$ graphene superlattices with intrinsic inter-valley interactions, we perform first-principles calculations to investigate the electronic properties of periodically nitrogen-doped…

We present exact analytical and numerical results for the electronic spectra and the Friedel oscillations around a substitutional impurity atom in a graphene lattice. A chemical dopant in graphene introduces changes in the on-site potential…

In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional Nitrogen dopants. It is well known that one current limitation of graphene in…

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its…

We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…