相关论文: Negative Differential Resistance, Memory and Recon…
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
We investigate electrical conduction through individual oligopeptide molecules thiol-bonded between gold nanocontacts using ab initio and semi-empirical techniques. Our theory explains for the first time these molecules' experimentally…
We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance…
Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
In this work, a novel electrospun conductive polymer nanocomposite made of polycaprolactone with an exohedral complex made of multiwalled carbon nanotubes and fullerene C60 was prepared and characterized. The preparation was straightforward…
We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We…
Flexible solution processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for…
We demonstrate that electroactive thin films incorporating semiconducting polymers and deterministic functionalized gold nanoclusters (ncAu25) lead to integration of the functions of resistive memory device and field-effect transistor…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs)…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
Nanofluidic memristive devices work with nanoscale pores and ions dissolved in water, which harness the ionic memory effect aiming to store and process information. These devices share the same charge carriers as biological systems and…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated…
In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a…
We report on the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in cluster-assembled nanostructured gold films above the electrical percolation and in…
Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…