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The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

介观与纳米尺度物理 · 物理学 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to…

材料科学 · 物理学 2016-06-17 A. N. Rudenko , S. Brener , M. I. Katsnelson

We study the charged impurity limited mobility in black phosphorus, a highly anisotropic layered material. We compute the mobility within the Boltzmann transport equation under detailed balance condition, and taking into account the…

材料科学 · 物理学 2016-04-06 Yue Liu , Tony Low , P. Paul Ruden

The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged…

介观与纳米尺度物理 · 物理学 2014-12-11 Zhun-Yong Ong , Gang Zhang , Yong Wei Zhang

The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport…

材料科学 · 物理学 2015-06-24 Bolin Liao , Jiawei Zhou , Bo Qiu , Mildred S. Dresselhaus , Gang Chen

In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon…

材料科学 · 物理学 2013-11-22 Kristen Kaasbjerg , Kristian S. Thygesen , Karsten W. Jacobsen

Recent $\textit{ab initio}$ theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26,000 to 35 cm$^{2}$ V$^{-1}$…

We show that black phosphorus has room-temperature charge mobilities on the order of 10$^4$ cm$^2$V$^{-1}$s$^{-1}$, which are about one order of magnitude larger than silicon. We also demonstrate strong anisotropic transport in black…

材料科学 · 物理学 2015-03-31 Jiaqi He , Dawei He , Yongsheng Wang , Qiannan Cui , Matthew Z. Bellus , Hsin-Ying Chiu , Hui Zhao

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black…

介观与纳米尺度物理 · 物理学 2015-10-20 Zhe Luo , Jesse Maassen , Yexin Deng , Yuchen Du , Richard P. Garrelts , Mark S. Lundstrom , Peide D. Ye , Xianfan Xu

The single-layer black phosphorus is characteristic for its puckered structure, which has leaded to highly anisotropy in its optical, electronic, and mechanical properties. We report, using the non-equilibrium Green's function approach and…

材料科学 · 物理学 2015-02-13 Jin-Wu Jiang

We compute the thermal conductivity of monolayer beryllene using the linearized phonon Boltzmann transport equation with interatomic force constants obtained from \textit{ab-initio} calculations. Monolayer beryllene exhibits an impressive…

材料科学 · 物理学 2024-09-10 Sapta Sindhu Paul Chowdhury , Santosh Mogurampelly

Anisotropic charge carrier transport in black phosphorus limited by ionized impurity scattering at finite temperature is explored theoretically. The anisotropic electronic structure enters the calculation for the polarizability (screening),…

介观与纳米尺度物理 · 物理学 2017-05-03 Yue Liu , P. Paul Ruden

Black phosphorus (BP) exhibits highly anisotropic properties and dynamical behavior that are unique even among two-dimensional and van der Waals (vdW) layered materials. Here, we show that an interlayer lattice contraction and concerted,…

介观与纳米尺度物理 · 物理学 2022-07-27 Mazhar Chebl , Xing He , Ding-Shyue Yang

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

A Stillinger-Weber interatomic potential is parameterized for phosphorene. It well reproduces the crystal structure, cohesive energy and phonon dispersion predicted by first-principles calculations. The thermal conductivity of phosphorene…

介观与纳米尺度物理 · 物理学 2015-10-19 Wen Xu , Liyan Zhu , Yongqing Cai , Gang Zhang , Baowen Li

The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the…

介观与纳米尺度物理 · 物理学 2015-06-12 Xiaodong Li , Jeffrey T. Mullen , Zhenghe Jin , Kostyantyn M. Borysenko , M. Buongiorno Nardelli , Ki Wook Kim

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample…

Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…

介观与纳米尺度物理 · 物理学 2017-03-13 Vasudevan Iyer , Peide Ye , Xianfan Xu

Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier…

介观与纳米尺度物理 · 物理学 2015-06-18 Steven P. Koenig , Rostislav A. Doganov , Hennrik Schmidt , A. H. Castro Neto , Barbaros Oezyilmaz

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim
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