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Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically…

Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by…

介观与纳米尺度物理 · 物理学 2014-09-16 A. Carvalho , A. H. Castro Neto

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently been shown to demonstrate non-volatile resistive switching (NVRS), offering significant advantages such as high-density integration and low energy consumption due to…

材料科学 · 物理学 2025-07-29 Brian H. Lee , Jameela Fatheema , Deji Akinwande , Wennie Wang

The band gap of two-dimensional (2D) semiconductors can be efficiently tuned by gate electric field, which is so called the Stark effect. We report that doping, which is essential in realistic devices, will substantially change the Stark…

材料科学 · 物理学 2017-12-14 Xiaobo Lu , Li Yang

Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential decay of electronic density of states into the bandgap,…

介观与纳米尺度物理 · 物理学 2023-08-04 Prasad Sarangapani , James Charles , Tillmann Kubis

Two-dimensional transition metal dichalcogenides (TMDs) exhibit an extensive variety of novel electronic properties, such as charge density wave quantum spin Hall phenomena, superconductivity, and Dirac and Weyl semi-metallic properties.…

强关联电子 · 物理学 2023-09-15 S. Koley

Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on…

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible…

材料科学 · 物理学 2016-01-18 Junwen Li , Nikhil V. Medhekar , Vivek B. Shenoy

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However,…

Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials been widely studied for emerging electronic properties. In this work, we use computational simulations to examine the water adsorption on TMDs…

计算物理 · 物理学 2024-02-20 Siheng Li , Keyang Liu , Jiří Klimeš , Ji Chen

Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex…

材料科学 · 物理学 2017-05-10 J. A. Silva-Guillén , E. Canadell , P. Ordejón , F. Guinea , R. Roldán

By means of first-principles density-functional theory (DFT) calculations, we perform a comparative analysis of the electronic and magnetic properties of transition metal-doped TiO$_2$. The electronic band gaps of Ti$_x$M$_{1-x}$O$_2$,…

材料科学 · 物理学 2026-01-26 Vikash Mishra , Shashi Pandey , Swaroop Ganguly , Alok Shukla

Gate-induced superconductivity at the surface of nanolayers of semiconducting transition metal dichalcogenides (TMDs) has attracted a lot of attention in recent years, thanks to the sizeable transition temperature, robustness against…

介观与纳米尺度物理 · 物理学 2020-01-27 Erik Piatti , Davide Romanin , Renato S. Gonnelli

Transition metal dichalcogenides (TMDs) are considered an advantageous alternative to their celebrated two-dimensional (2D) van der Waals akin compound, graphene, for a number of applications, especially those requiring a gapped and…

材料科学 · 物理学 2025-02-18 I. Pallecchi , N. Manca , B. Patil , L. Pellegrino , D. Marre'

Layered transition metal dichalcogenides MoTe$_2$ and WTe$_2$ share almost similar lattice constants as well as topological electronic properties except their structural phase transitions. While the former shows a first-order phase…

介观与纳米尺度物理 · 物理学 2017-05-10 Hyun-Jung Kim , Seoung-Hun Kang , Ikutaro Hamada , Young-Woo Son

Transition metal dichalcogenide (TMD) monolayers attract great attention due to their specific structural, electronic and mechanical properties. The formation of their lateral heterostructures allows a new degree of flexibility in…

材料科学 · 物理学 2020-09-29 Sadegh Imani Yengejeh , William Wen , Yun Wang

Transition metal dichalcogenides (TMDs) are known to have a wide variety of magnetic structures by hosting other transition metal atoms in the van der Waals gaps. To understand the chemical trend of the magnetic properties of the…

材料科学 · 物理学 2023-05-24 Tatsuto Hatanaka , Takuya Nomoto , Ryotaro Arita

The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a…

介观与纳米尺度物理 · 物理学 2014-09-19 Chih-Pin Lu , Guohong Li , Jinhai Mao , Li-Min Wang , Eva Y. Andrei

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The…

A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different doping concentrations has been carried out using time-of-flight momentum microscopy (including…