相关论文: Origin of layer number dependent linear and nonlin…
The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related…
Optical and electronic properties of two dimensional few layers graphitic silicon carbide (GSiC), in particular monolayer and bilayer, are investigated by density functional theory and found different from that of graphene and silicene.…
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with…
The second-order nonlinear optical susceptibility ($\chi_{abc}^{(2)}$) and linear electro-optical coefficient ($r_{abc}$) of a large number of single-walled zigzag, armchair and chiral SiC nanotubes (SiC-NTs) as well as bulk SiC polytypes…
Although 2D solids and their vdW heterostructures have garnered much attention recently, their amorphous forms have been less explored. We present a detailed analysis of the structural, electronic, and thermal properties of 2D amorphous…
Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K.…
Amorphous silicon contains tunneling two-level systems, which are the dominant energy loss mechanisms for amorphous solids at low temperatures. These two-level systems affect both mechanical and electromagnetic oscillators and are believed…
We study the origin of layer dependence in band structures of two-dimensional materials. We find that the layer dependence, at the density functional theory (DFT) level, is a result of quantum confinement and the non-linearity of the…
Two-dimensional silicon carbide stands out among 2D materials, primarily due to its notable band gap, unlike its carbon-based counterparts. However, the binary nature and non-layered structure of bulk SiC present challenges in fabricating…
We examined, in backward (reflection) geometry, the generation of the 3rd and 5th harmonics, located in the deep and vacuum ultraviolet, on the surface of silicon and on the interface between silicon and silica when a thin silica film was…
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is…
We report on strong coupling of the charge carrier plasmon $\omega_{PL}$ in graphene with the surface optical phonon $\omega_{SO}$ of the underlying SiC(0001) substrate with low electron concentration ($n=1.2\times 10^{15}$ $cm^{-3}$) in…
We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence…
Optical second harmonic generation (SHG) is studied from multilayer graphene films in the presence of DC electric current flowing in the sample plane. Graphene layers are manufactured by chemical vapour deposition (CVD) technique and…
The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be…
The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find…
The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of a dielectric layer with different thickness leads to…
Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the…
Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired…
The dc-current-induced optical second-harmonic generation is observed at the surface of centrosymmetric single crystal of Si. Surface dc-current with density up to $\textit{j}_{max} \sim 10^{3}$ A/cm$^{2}$ results in break of inversion…