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Low-temperature specific heat (SH) is measured on Ba(Fe$_{1-x}$Co$_{x}$)$_2$As$_2$ single crystals in a wide doping region under different magnetic fields. For the overdoped sample, we find the clear evidence for the presence of $T^2$ term…

超导电性 · 物理学 2011-08-17 Gang Mu , Jun Tang , Yoichi Tanabe , Jingtao Xu , Satoshi Heguri , Katsumi Tanigaki

In condensed matter physics, various mechanisms give rise to distinct insulating phases. The competition and interplay between these phases remain elusive, even for the seemingly most distinguishable band and Mott insulators. In multilayer…

材料科学 · 物理学 2025-02-14 Zijian Lin , Jie Li , Xiaodong Cao , Jingjing Gao , Xuan Luo , Yuping Sun , Yi Lu , Nanlin Wang , Jiandong Guo , Xuetao Zhu

Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast…

Junctions of doped Mott insulators offer a route to rectification at frequencies beyond the terahertz range. Mott insulators have strong electronic correlations and therefore short timescales for electron-electron scattering. It is this…

强关联电子 · 物理学 2013-05-28 Florian C. Sabou , Natalie Bodington , J. B. Marston

The Sn/Si(111)-({\sqrt}3{\times}{\sqrt}3)R30{\deg} surface, a 2D Mott insulator, has long been predicted and then found experimetally to metallize and even turn superconducting upon boron doping. In order to clarify the structural,…

We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x.…

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…

材料科学 · 物理学 2015-05-18 Wolfgang L. Kalb , Simon Haas , Cornelius Krellner , Thomas Mathis , Bertram Batlogg

We carry out temperature-dependent scanning tunneling microscopy (STM) studies of the charge density wave (CDW) compound ZrTe$_3$ which is intentionally doped with Hf. Previous bulk studies tie Hf doping to an enhancement of the CDW…

Cold neutron spectroscopy was performed on CeNi_{1-x}Cu_xSn to investigate how the magnetic gap in the 'Kondo insulator' CeNiSn is destroyed by temperature (T), chemical substitution (x), and external magnetic field. Upon doping, the spin…

强关联电子 · 物理学 2008-02-03 A. Schroeder , G. Aeppli , T. E. Mason , E. Bucher , C. Broholm , K. N. Clausen

High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are…

We discuss how variations in the scanning tunneling microscope (STM) tip, whether unintentional or intentional, can lead to changes in topographic images and dI/dV spectra. We consider the possibility of utilizing functionalized tips in…

超导电性 · 物理学 2015-05-28 Ilpo Suominen , Jouko Nieminen , R. S. Markiewicz , A. Bansil

The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess…

In a Scanning Tunneling Microscope (STM), when a tunneling electron treated as a point charge enters the barrier region between the tip and the sample, it induces image charges on the conducting surfaces, which modifies the shape of the…

其他凝聚态物理 · 物理学 2026-05-15 Malati Dessai , Arun V. Kulkarni

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

强关联电子 · 物理学 2020-01-29 Yu-Liang Liu

The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra…

介观与纳米尺度物理 · 物理学 2015-06-11 J. A. Mol , J. Salfi , R. Rahman , Y. Hsueh , J. A. Miwa , G. Klimeck , M. Y. Simmons , S. Rogge

The screening of Coulomb interaction controls many-body physics in carbon nanotubes, as it tunes the range and strength of the force that acts on charge carriers and binds electron-hole pairs into excitons. In doped tubes, the effective…

介观与纳米尺度物理 · 物理学 2022-05-11 Giacomo Sesti , Daniele Varsano , Elisa Molinari , Massimo Rontani

The combination of strong spin-orbit coupling and Coulomb interactions makes the $5d$ iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott…

强关联电子 · 物理学 2026-03-06 Kai Wang , Jun Yang , Chaoyang Kang , Weikang Wu , Wenka Zhu , Jianzhou Zhao , Yaomin Dai , Bing Xu

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…

材料科学 · 物理学 2017-11-22 Nicolas Onofrio , David Guzman , Alejandro Strachan

Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric…