相关论文: Poor electronic screening in lightly doped Mott in…
Recent scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e. nano-scale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-Tc…
Recently the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, a definite proof…
Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage…
Disentangling the relationship between the insulating state with a charge gap and the magnetic order in an antiferromagnetic (AF) Mott insulator remains difficult due to inherent phase separation as the Mott state is perturbed. Measuring…
Theoretical understanding of scanning tunnelling microscope (STM) measurements involve electronic structure details of the STM tip and the sample being measured. Conventionally, the focus has been on the accuracy of the electronic state…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the…
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…
The light emission rate from a scanning tunneling microscope (STM) scanning a noble metal surface is calculated taking retardation effects into account. As in our previous, non-retarded theory [Johansson, Monreal, and Apell, Phys. Rev. B…
Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias…
The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a…
The spectral properties of a one-dimensional (1D) single-chain Mott insulator Sr$_2$CuO$_{3}$ have been studied in angle-resolved photoemission and optical spectroscopy, at half filling and with small concentrations of extra charge doped…
The single-layer Mott insulator strontium iridate Sr$_2$IrO$_4$ was studied using a scanning tunneling microscope. This measurement technique is unique due to the transport properties of this Mott insulator allowing tunneling measurements…
Real-space mapping of doping concentration in semiconductor devices is of great importance for the microelectronic industry. In this work, a scanning microwave impedance microscope (MIM) is employed to resolve the local conductivity…
By using scanning tunneling microscopy (STM) / spectroscopy (STS), we systematically characterize the electronic structure of lightly doped 1T-TiSe2, and demonstrate the existence of the electronic inhomogeneity and the pseudogap state. It…
Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted many research attentions. There were many theoretical works using different…
We use a nonequilibrium implementation of extended dynamical mean field theory to study the effect of dynamical screening in photo-excited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a…
This study investigates the influence of indium doping on the defect states in (Bi0.3Sb0.7)2Te3 (BST) ternary topological insulators. Thin (10 nm) and thick (60 nm) films of pristine BST and indium-doped BST (In0.14(Bi0.3Sb0.7)1.86Te3) were…
Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key for resolving the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electronic state starting…