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Graphene is a fascinating material for exploring fundamental science questions as well as a potential building block for novel electronic applications. In order to realize the full potential of this material the fabrication techniques of…

介观与纳米尺度物理 · 物理学 2017-08-23 Xu Du , Ivan Skachko , Eva Y. Andrei

Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain…

介观与纳米尺度物理 · 物理学 2017-06-09 Péter Nemes-Incze , Gergő Kukucska , János Koltai , Jenő Kürti , Chanyong Hwang , Levente Tapasztó , László P. Biró

Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand,…

介观与纳米尺度物理 · 物理学 2012-08-31 S. Bala Kumar , Jing Guo

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…

The discovery of correlated phases in twisted moir\'e superlattices accelerated the search for low-dimensional materials with exotic properties. A promising approach uses engineered substrates to strain the material. However, designing…

介观与纳米尺度物理 · 物理学 2023-08-25 Md Tareq Mahmud , Dawei Zhai , Nancy Sandler

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the…

There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches…

Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…

介观与纳米尺度物理 · 物理学 2016-11-16 Yangbo Zhou , Jakub Jadwiszczak , Darragh Keane , Ying Chen , Dapeng Yu , Hongzhou Zhang

We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with…

介观与纳米尺度物理 · 物理学 2009-11-13 Barbaros Özyilmaz , Pablo Jarillo-Herrero , Dmitri Efetov , Philip Kim

Straintronic devices made of carbon-based materials have been pushed up due to the graphene high mechanical flexibility and the possibility of interesting changes in transport properties. Properly designed strained systems have been…

介观与纳米尺度物理 · 物理学 2018-05-02 V. Torres , D. Faria , A. Latgé

This review covers recent experimental progress in probing the electronic properties of graphene and how they are influenced by various substrates, by the presence of a magnetic field and by the proximity to a superconductor. The focus is…

介观与纳米尺度物理 · 物理学 2012-04-23 Eva Y. Andrei , Guohong Li , Xu Du

Graphene, due to its superior stretchability, exhibits rich structural deformation behaviors and its strain-engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and…

材料科学 · 物理学 2012-09-04 Ji Eun Lee , Gwanghyun Ahn , Jihye Shim , Young Sik Lee , Sunmin Ryu

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present…

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

介观与纳米尺度物理 · 物理学 2007-06-19 B. Huard , J. A. Sulpizio , N. Stander , K. Todd , B. Yang , D. Goldhaber-Gordon

We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work…

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…

介观与纳米尺度物理 · 物理学 2015-06-04 Søren Ulstrup , Marco Bianchi , Richard Hatch , Dandan Guan , Alessandro Baraldi , Dario Alfè , Liv Hornekær , Philip Hofmann

Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the…

Deformations in graphene systems are central elements in the novel field of {\it straintronics}. Various strain geometries have been proposed to produce specific properties but their experimental realization has been limited. Because…

介观与纳米尺度物理 · 物理学 2016-09-20 R. Carrillo-Bastos , C. León , D. Faria , A. Latgé , Eva Y. Andrei , N. Sandler

The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…

介观与纳米尺度物理 · 物理学 2008-10-02 Xu Du , Ivan Skachko , Anthony Barker , Eva Y. Andrei
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