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相关论文: Non-local opto-electrical spin injection and detec…

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In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin…

The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local…

介观与纳米尺度物理 · 物理学 2012-09-25 I. J. Vera-Marun , V. Ranjan , B. J. van Wees

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…

介观与纳米尺度物理 · 物理学 2010-09-14 En-Shao Liu , Junghyo Nah , Kamran M. Varahramyan , Emanuel Tutuc

In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the…

In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the…

介观与纳米尺度物理 · 物理学 2009-12-01 Sergio O. Valenzuela

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…

介观与纳米尺度物理 · 物理学 2009-11-11 Sergio O. Valenzuela , M. Tinkham

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…

Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between…

Extensive efforts are currently being devoted to developing a new electronic technology, called spintronics, where the spin of electrons is explored to carry information. [1,2] Several techniques have been developed to generate pure spin…

介观与纳米尺度物理 · 物理学 2011-02-10 Lalani K. Werake , Hui Zhao

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…

其他凝聚态物理 · 物理学 2015-06-24 Igor Zutic , Jaroslav Fabian , Steven C. Erwin

We study the magnon transport in the nonlocal configuration composed of two Pt strips on top of yttrium iron garnet, with and without the presence of RF microwave generated by an on-chip antenna. We find that the spin-Hall induced thermal…

应用物理 · 物理学 2019-10-28 Yabin Fan , Justin T. Hou , Joseph Finley , Se Kwon Kim , Yaroslav Tserkovnyak , Luqiao Liu

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…

介观与纳米尺度物理 · 物理学 2012-02-07 K. Olejnik , J. Wunderlich , A. C. Irvine , R. P. Campion , V. P. Amin , Jairo Sinova , T. Jungwirth

Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are…

介观与纳米尺度物理 · 物理学 2021-08-30 Piotr Skalski , Olga Zadvorna , Deepak Venkateshvaran , Henning Sirringhaus

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

介观与纳米尺度物理 · 物理学 2007-05-23 A. T. Filip , B. H. Hoving , F. J. Jedema , B. J. van Wees

Spin Hall effect in a nonlocal spin-injection device is theoretically studied. Using a nonlocal spin-injection technique, a pure spin current is created in a nonmagnetic metal (N). The spin current flowing in N is deflected by spin-orbit…

介观与纳米尺度物理 · 物理学 2015-06-25 S. Takahashi , S. Maekawa

Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…

材料科学 · 物理学 2013-05-16 K. Hamaya , Y. Ando , K. Masaki , Y. Maeda , Y. Fujita , S. Yamada , K. Sawano , M. Miyao

Spin insulatronics covers efforts to generate, detect, control, and utilize high-fidelity pure spin currents and excitations inside magnetic insulators. Ultimately, the new findings may open doors for pure spin-based information and…

介观与纳米尺度物理 · 物理学 2020-10-27 Arne Brataas , Bart van Wees , Olivier Klein , Gregoire de Loubens , Michel Viret

Although the electrical injection, transport and detection of spins in silicon have been achieved, the induced spin accumulation was much smaller than expected and desired, limiting the potential impact of Si-based spintronic devices. Here,…

介观与纳米尺度物理 · 物理学 2017-12-27 A. Spiesser , H. Saito , Y. Fujita , S. Yamada , K. Hamaya , S. Yuasa , R. Jansen

Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the…

介观与纳米尺度物理 · 物理学 2024-10-11 Anamul Md. Hoque , Lars Sjöström , Dmitrii Khokhriakov , Bing Zhao , Saroj P. Dash

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…

介观与纳米尺度物理 · 物理学 2015-06-04 R. Jansen , A. M. Deac , H. Saito , S. Yuasa
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