相关论文: Oscillating magnetoresistance in graphene p-n junc…

The electronic transport of graphene p-n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus…

We present a theory presenting new quantum oscillations in the magnetoresistance that are revealed as fine structures superimposed to the Schubnikov-de-Haas oscillations. They may be observed in experiments on graphene layers as fine…

The proposed semiclassical theory predicts two types of oscillations in the flow of current injected from a point source near a ballistic p-n junction in graphene in a strong magnetic field. One originates from the classical effect of…

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional…

A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at…

We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…

We present a theoretical study of Weiss oscillations in magnetoconductivity of bilayer graphene. Bilayer graphene in the presence of a perpendicular magnetic field and a unidirectional weak electric modulation is considered.We determine the…

Snake states and Aharonov-Bohm interferences are examples of magnetoconductance oscillations that can be observed in a graphene p-n junction. Even though they have already been reported in suspended and encapsulated devices including…

Measurement of magnetic oscillations on thermodynamic quantities (like magnetization and specific heat), is one of the experimental methods to access the density of states of electronic systems. In the present paper we therefore…

The problem of Dirac fermions in graphite subject to a perpendicular magnetic field is studied. We show analytically that the weak inter-layer interaction between the graphene sheets leads to anomalies in the Shubnikov-de Haas and de…

Quantum dynamics and kinetics of electrically gated graphene ribbons with lateral n-p and e-n-p junctions under magnetic field are investigated. It is shown that the snake-like states of quasiparticles skipping along the n-p interface do…

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…

A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…

We have measured magnetoresistance of suspended graphene in the Corbino geometry at magnetic fields up to $B=0.15\,$T, i.e., in a regime uninfluenced by Shubnikov-de Haas oscillations. The low-temperature relative magnetotoresistance…

A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas…

A balance-equation scheme is developed to investigate the magnetotransport in a dc-current-biased graphene. We examine the Shubnikov-de Haas oscillation under a nonzero bias current. With an increase in the current density, the oscillatory…

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures,…

We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu…

We report on the magnetotransport properties of a prototype Mott insulator/band insulator perovskite heterojunction in magnetic fields up to 31 T and at temperatures between 360 mK and 10 K. Shubnikov-de Haas oscillations in the…