相关论文: One-dimensional electron gas in strained lateral h…
Diffraction of light at lateral inhomogenities is a central process in the near-field studies of nanoscale phenomena, especially the propagation of surface waves. Theoretical description of this process is extremely challenging due to…
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…
We discuss alternative homogeneous electron gas systems in which a finite number $n$ of electrons are confined to a $D$-dimensional sphere. We derive the first few terms of the high-density ($r_s\to0$, where $r_s$ is the Seitz radius)…
In this review, we discuss the impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials. We review recent progress in understanding electronic transport in two-dimensional (2D) materials…
Layered oxide heterostructures are the new routes to tailor desired electronic and magnetic phases emerging from competing interactions involving strong correlation, orbital hopping, tunnelling and lattice coupling phenomena. Here, we…
Oxide heterostructures are of great interest both for fundamental and applicative reasons. In particular the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ or LaTiO$_3$/SrTiO$_3$ interfaces displays many different physical…
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse…
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…
We consider the problem of electron transport across a quasi-one-dimensional disordered multiply-scattering medium, and study the statistical properties of the electron density inside the system. In the physical setup that we contemplate,…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron…
We present measurements of the energy relaxation length scale $\ell$ in two-dimensional electron gases (2DEGs). A temperature gradient is established in the 2DEG by means of a heating current, and then the elevated electron temperature…
We have investigated electron transport in a quasi-one dimensional (quasi-1D) electron gas as a function of the confinement potential. At a particular potential configuration, and electron concentration, the ground state of a 1D quantum…
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high…
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different…
We investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe$_2$ to ferroelectric domain walls (DW) in periodically poled LiNbO$_3$. Our device exploits…
We measure the energy distribution of electrons passing through a two-dimensional electron gas using a scanning probe microscope. We present direct spatial images of coherent electron wave flow from a quantum point contact formed in a…
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…
When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…
We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO…