相关论文: Anisotropic Pauli Spin Blockade of Holes in a GaAs…

We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…

A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin…

Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2…

We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the…

We theoretically study the interaction of a heavy hole with nuclear spins in a quasi-two-dimensional III-V semiconductor quantum dot and the resulting dephasing of heavy-hole spin states. It has frequently been stated in the literature that…

Using an exact diagonalization approach we show that one- and two-electron InAs quantum dots exhibit avoided crossing in the energy spectra that are induced by the spin-orbit coupling in the presence of an in-plane external magnetic field.…

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…

We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr…

In this article we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular we consider different spatial…

The study of charge and spin transport through semiconductor quantum dots is experiencing a renaissance due to recent advances in nano-fabrication and the realization of quantum dots as candidates for quantum computing. In this work, we…

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing…

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…

A heavy hole confined to an InGaAs quantum dot promises the union of a stable spin and optical coherence to form a near perfect, high-bandwidth spin-photon interface. Despite theoretical predictions and encouraging preliminary measurements,…

We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite…

Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…

Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin…

In the presence of spin-orbit coupling, quantum models for semiconductor materials are generally not exactly solvable. As a result, understanding of the strong spin-orbit coupling effects in these systems remains poor. Here we develop an…

We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…

We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…