相关论文: Anisotropic Pauli Spin Blockade of Holes in a GaAs…
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…
For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system.…
Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian.…
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier.…
We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the…
We present gate-controlled single, double, and triple dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal…
Theoretical research on electronic properties in mesoscopic condensed matter systems has focused primarily on the electron charge freedom degrees, while its corresponding spin freedom degrees have not yet received the same attention.…
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and…
We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs…
We present a theoretical study of ac charge transport arising from adiabatic temporal variation of zero-field spin splitting in a quasi-onedimensional hole system (realized, e.g., in a quantum wire or point contact). As in…
Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single spins in nanostructures to read out semiconductor qubits. The…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
A global quantitative picture of the phonon-induced two-electron spin relaxation in GaAs double quantum dots is presented using highly accurate numerical calculations. Wide regimes of interdot coupling, magnetic field magnitude and…
We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \times 10^{10} \leq p \leq 4.0 \times 10^{11}$ cm$^{-2}$, with primary focus on…
Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical…
We analyze time-dependent transport through a quantum dot with electron-electron interaction that is statically tunable to both repulsive and attractive regimes, or even dynamically driven. Motivated by the recent experimental realization…
Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits.…
Electron spins in GaAs quantum dots have been used to make qubits with high-fidelity gating and long coherence time, necessary ingredients in solid-state quantum computing. The quantum dots can also host photon qubits with energy applicable…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum…