相关论文: Graphene Contacts to a HfSe2/SnS2 Heterostructure
The high tunability of the density of states of graphene makes it an ideal probe of quantum transport in different regimes. In particular, the supercurrent that can flow through a non-superconducting (N) material connected to two…
Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…
Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or…
Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current…
In the pursuit of developing routes to enhance magnetic Kitaev interactions in {\alpha}-RuCl3, as well as probing doping effects, we investigate the electronic properties of {\alpha}-RuCl3 in proximity to graphene. We study…
A bilayer formed by stacking two distinct materials creates a moir\'e lattice, which can serve as a platform for novel electronic phases. In this work we study a unique example of such a system: the graphene-black phosphorus heterostructure…
While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological…
The interplay between substrate interactions and electron-phonon coupling in two-dimensional (2D) materials presents a significant challenge in understanding and controlling their electronic properties. Here, we present a comparative study…
This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction…
Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott…
Two-dimensional systems that host one-dimensional helical states are exciting from the perspective of scalable topological quantum computation when coupled with a superconductor. Graphene is particularly promising for its high electronic…
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…
We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was…
By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from -7% (compression) to +7%…
Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…
We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples…
Van der Waals (vdW) heterostructures are receiving great attentions due to their intriguing properties and potentials in many research fields. The flow of charge carriers in vdW heterostructures can be efficiently rectified by the…
Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material…
Tin Selenide (SnSe) is one of the best thermoelectric materials reported to date. The possibility of growing few-layer SnSe helped boost the interest in this long-known, earth abundant material. Pristine SnSe in bulk, mono- and few-layer…
Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance…