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相关论文: Engineering the optoelectronic properties of MoS2 …

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Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable…

应用物理 · 物理学 2017-10-03 Alexander E. Yore , K. K. H. Smithe , Sauraj Jha , Kyle Ray , Eric Pop , A. K. M. Newaz

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…

仪器与探测器 · 物理学 2021-03-02 Zhijuan Xu , Shisheng Lin , Xiaoqiang Li , Shengjiao Zhang , Zhiqian Wu , Wenli Xu , Yanghua Lu , Sen Xu

Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene…

One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…

材料科学 · 物理学 2013-08-13 Mohammad R. Esmaeili-Rad , Sayeef Salahuddin

Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…

仪器与探测器 · 物理学 2023-03-28 Rakesh K. Prasad , Koushik Ghosh , P. K. Giri , Dai-Sik Kim , Dilip K. Singh

Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…

介观与纳米尺度物理 · 物理学 2024-08-09 Seyed Saleh Mousavi Khaleghi , Jianyong Wei , Yumeng Liu , Zhengfang Fan , Kai Li , Kenneth B. Crozier , Yaping Dan

The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using…

介观与纳米尺度物理 · 物理学 2015-12-09 Haining Wang , Changjian Zhang , Weimin Chan , Sandip Tiwari , Farhan Rana

Integrating two-dimensional (2D) crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, our ability to produce complicated structures is limited by the challenges of chemical…

应用物理 · 物理学 2018-07-03 Yi-feng Xiong , Jin-hui Chen , Fei Xu

Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…

应用物理 · 物理学 2019-05-24 David Maeso , Andres Castellanos-Gomez , Nicolas Agraït , Gabino Rubio-Bollinger

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible…

Strong light absorption, coupled with moderate carrier transport properties, makes two-dimensional (2-D) layered transition metal dichalcogenide (TMD) semiconductors promising candidates for low intensity photodetection applications.…

介观与纳米尺度物理 · 物理学 2018-02-15 Sangeeth Kallatt , Smitha Nair , Kausik Majumdar

We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the…

Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high…

Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor…

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated…

介观与纳米尺度物理 · 物理学 2018-03-15 Peize Han , Luke St. Marie , Qing X. Wang , Nicholas Quirk , Abdel El Fatimy , Masahiro Ishigami , Paola Barbara

We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed…

Arrays of photodetector-based pixel sensors are ubiquitous in modern devices, such as smart phone cameras, automobiles, drones, laptops etc. Two dimensional (2D) material-based photodetector arrays are a relevant candidate, especially for…

Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…

We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon…

Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, we report on the fabrication of ReS2…

材料科学 · 物理学 2019-08-17 Enze Zhang , Yibo Jin , Xiang Yuan , Weiyi Wang , Cheng Zhang , Lei Tang , Shanshan Liu , Peng Zhou , Weida Hu , Faxian Xiu
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